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Stress Formation in Boron Nitride Films Prepared by Ion Beam Assisted Deposition

Published online by Cambridge University Press:  10 February 2011

B. Rauschenbach  and
S. Sienz
B. Rauschenbach
Affiliation:
Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany, [email protected]
S. Sienz
Affiliation:
Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany, [email protected]
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Abstract

The stress formation during N/Ar ion assisted deposition of boron nitride films on Si(001) substrates was measured in-situ by a very sensitive capacity technique in dependence on the ion energy, temperature during deposition and the ion to atom arrival rate.

The stress evolution in dependence on the layer thickness is characterized by a high tensile stress in the initial stage of the film growth, followed by a transition from the tensile to the compressive stress state, a strong increase of the compressive stress with the film thickness. A simultaneous UV-light irradiation during the deposition process leads to a reduction of the compressive stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 585: Symposium L – Fundamental Mechanisms of Low-Energy-Beam Modified Surface , 1999 , 153
Copyright
Copyright © Materials Research Society 2000

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