Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-19T02:18:11.546Z Has data issue: false hasContentIssue false
  • English
  • Français

Stress Dependent Electrical Activation of Implanted Si IN GaAs - A Four Point Bending Study

Published online by Cambridge University Press:  26 February 2011

J. G. Huang ,
R. J. Jaccodine ,
J. H. Huang ,
S. A. Schwarz ,
C. L. Schwartz  and
R. Bhat
J. G. Huang
Affiliation:
Sherman Fairchild Center for Solid State Studies, Lehigh University, Bethlehem, PA 18015
R. J. Jaccodine
Affiliation:
Sherman Fairchild Center for Solid State Studies, Lehigh University, Bethlehem, PA 18015
J. H. Huang
Affiliation:
Sherman Fairchild Center for Solid State Studies, Lehigh University, Bethlehem, PA 18015
S. A. Schwarz
Affiliation:
Bell Communications Research, Redbank, NJ 07701
C. L. Schwartz
Affiliation:
Bell Communications Research, Redbank, NJ 07701
R. Bhat
Affiliation:
Bell Communications Research, Redbank, NJ 07701
Get access

Abstract

A four point bending experiment was conducted to study the effect of stress on the electrical activation of implanted 29Si in GaAs. The stress distribution in the SiNx-coated GaAs was quantitatively examined. 29Si electrical activation was found to depend strongly on the magnitude of the stress when specimens were annealed under tensile stress; compressive stress had a negligible effect. The n-type GaAs was converted into p-type under excess tensile stress. This stress dependence of electrical activation is attributed to the differences in dislocation characteristics and its interaction with implanted Si under tensile or compressive bending.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 226: Symposium H – Mechanical Behavior of Materials and Structures in Microelectronics , 1991 , 157
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Otsuki, T., J. Appl. Phys. 61, 928 (1987).Google Scholar
2. Chang, E. Y., Cibuzar, G. T., and Pande, K. P., IEEE, Trans. Elec. Dev. 35, 1412 (1988).Google Scholar
3. Vanasupa, L. S., Deal, M. D., and Plummer, J. D., Appl. Phys. Lett. 55, 274 (1989).Google Scholar
4. Booyens, H., Vermaak, J. S., and Proto, G. R., J. Appl. Phys. 49, 5435 (1978).Google Scholar
5. Martin, P. M. and Exarhos, G. J., J. Vac. Sci. Technol. A3(3), 615 (1985).Google Scholar
6. Crandal, S. H., Dahl, N. C., and Lardner, T. J. eds. An Introduction to the Mechanics of Solid, McGraw-Hill, NY, 1976.Google Scholar
7. Blood, P., Semiconductor Sci. & Tech., vol.1, 7, Jul.(1986).Google Scholar
8. Sumino, K., in Defects and Properties of Semiconductors: Defect Engineering, ed. by Chikawa, J., Sumino, K., and Wada, K., KTK Sci. Pub. Tokyo, 1987, p.5.Google Scholar
9. Reed-Hill, R. E., Physical Metallurgy Principles, 2nd ed. D. Van Nostrand Co. 267(1973).Google Scholar
10. Skoworonski, M., Lagowski, J., Milshtein, M., Kang, C. H., Dabkowski, F. P., Hennel, A., and Gatos, H. C., J Appl. Phys. 62, 3791(1987).Google Scholar