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Stress and Microstructure in Phosphorus Doped Polycrystalline Silicon

Published online by Cambridge University Press:  15 February 2011

P. Krulevitch ,
G. C. Johnson  and
R. T. Howe
P. Krulevitch
Affiliation:
Berkeley Sensor & Actuator Center, Department of Mechanical Engineering
G. C. Johnson
Affiliation:
Berkeley Sensor & Actuator Center, Department of Mechanical Engineering
R. T. Howe
Affiliation:
Berkeley Sensor & Actuator Center, Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
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Abstract

The research presented here is an investigation of the effects of phosphorus doping on residual stresses and microstructure in polycrystalline silicon. Undoped polycrystalline silicon films were deposited on phosphosilicate glass layers and annealed at 1050 °C for 5 to 60 minutes. The stress gradient through the film thickness was measured from wafer curvature, and microstructure was examined with cross-sectional TEM. A 20 minute anneal is sufficient for stress relief in initially tensile films and produces a uniform microstructure consisting of 0.1-0.2 µm equi-axed grains.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 276: Symposia U/Y – Smart Materials Fabrication and Materials for Micro-Electro-Mechanical Systems , 1992 , 79
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Howe, R.T.,Mat. Res. Soc. Symp. Proc., vol.106. p. 213, 1988.Google Scholar
2. Karnins, T.I., Polycryttalline Silicon for Integrated Circuit Application., KIuwer Academic publishers, Boston, 1988.Google Scholar
3. Kamins, T.I., Sens. and Act., vol. A21–A23, p. 817, 1990.CrossRefGoogle Scholar
4. Guckel, H.. Randazzo, T., and Bums, D.W., J. Appi. Phys., vol.57, pp. 1671–1675, 1985.CrossRefGoogle Scholar
5. Fan, L.S., Muller, R.S., Yun, W., Iluang, J.. and llowe, R.T., IEEE Proceedings on Micro Electro Mechanical Systemr. p. 177. 1990.Google Scholar
6. Krulevitch, P., Johnson, G.C., and Ilowe, R.T., To be Published in Mat. Res. Soc. Synup. Proc., vol. 239, 1991.Google Scholar
7. Ilowc, R.T. and Muller, R.S., J. Appt. Phys., vol.54, p. 4674, 1983.Google Scholar
8. Guckel, H., Sniegowski, J.J., Christenson, T.R., Mohncy, S., and Kelly, T.F., Sensors and Actuators, vol.20 p,117, 1989.Google Scholar
9. Murarka, S.P. and Retajczyk, T.F. Jr,J. Appl. Phys., vol.54, p. 2069. 1983.Google Scholar
10. Ozpana, M. and Korhonen, A.O., Digest of Technical Papers, Transducers “ 91, p. 957, June, 1991.Google Scholar
11. Choi, M.S. and Heam, E.W..,E lectrochem. Soc.. vol.131, p. 2443, 1984.Google Scholar
12. Najafi, K. andSuzuki, K.. Thin Solid Films, vol.181. p. 251, 1989.Google Scholar
13. Hendriks, M., Delhez, R., and Radclaar, S., Carbon Doped Polycrystalline Silicon Layers, in Studies in Inorganic Chemistry, 3, p. 193,Elsevier, Amsterdam. 1983.Google Scholar
14. Tang, W.C., Nguyen, T.I., and Ilowe, R.T.. Procedingsf rom IEEE.Micro ElectromechanicalSystems Workshop, Salt Lake City, Utah, p. 53, 1989.Google Scholar
15. Stoney, G.G., Proc. Roy. Soc. London, vol.9. p. 172, 1909.Google Scholar
16. Hloffman, R.W., Physics of Thin Films, Vol 3, ed. byHass, G. and Thun, T.E., pp. 211–273, Academic Press, New York, 1966.Google Scholar
17. Ferrari, M. and Weber, M.. Mat. Res. Soc. Synrp. Proc., this volume, 1992.Google Scholar
18. Brantley, W.A., J. Appl. Phys., vol.44, p. 534, 1973.Google Scholar
19. Nguyen, Tai D., Gronsky, R., and Kortright, J.B., J. Elect. Microsc. Tech., vol.19, p. 473, 1991.Google Scholar
20. Kmlevitch, P., Nguyen, Tai D., Johnson, G.C., Howe, R.T., Wenk, H.R., and Gronsky, R.. Mat. Res. Soc. Symp. Proc., vol.202, p. 167, 1990.Google Scholar
21. Thompson, C.V., J. Appl. Phys., vol.58, p. 763, 1985.Google Scholar
22. Cahn, R.W., Physical Metallurgy, ed. by Cahn, R.W.. p. Chapt. 19, North Holland, Amsterdam, 1970.Google Scholar
23. Wada, Y. and Nishimatsu, S., J. Electrochem. Soc., vol.125, p. 1499, 1978.CrossRefGoogle Scholar
24. Kinsbron, E., Stemhcim, M., and Knoell, R., Appl. Phys. Lett., vol.42, p. 835, 1983.Google Scholar
25. Bloem, J. and Beers, A.M., Thin Solid Films, vol.124, p. 93, 1985.CrossRefGoogle Scholar
26. Bravman, J.C. and Sinclair, R., Thin Solid Films, Vol. 104 p., 153,1983.Google Scholar