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Stranski-Krastanov Growth of Ni on Si(111) at Room Temperature

Published online by Cambridge University Press:  25 February 2011

J. R. Butler  and
P. A. Bennett
J. R. Butler
Affiliation:
Physics Department, Arizona State University, Tempe, Arizona 85287
P. A. Bennett
Affiliation:
Physics Department, Arizona State University, Tempe, Arizona 85287
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Abstract

We introduce quantitative Auger lineshape analysis methods to study the room temperature reaction of nickel on Si(111). We show that coexisting phases may be separated by numerically fitting the composite lineshapes using a linear combination of single phase “fingerprint” spectra, obtained by scraping bulk compounds in situ. The reaction proceeds in three stages. For nickel coverage below 1 Å, the growth is layerwise, forming NiSi2. For nickel coverage from 3 to 12 Å, islands of Ni2Si are formed. For nickel coverage above 12 Å, islands of pure nickel are formed. The overlayer reactions appear to be a kinetically limited form of Stranski-Krastanov growth, with multiple compound formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 159
Copyright
Copyright © Materials Research Society 1990

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References

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