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Strain-Induced Lateral Confinement of Carriers in Semiconductor Quantum Wells

Published online by Cambridge University Press:  26 February 2011

K. Kash ,
R. Bhat ,
Derek D. Mahoney ,
J.M. Worlock ,
P.S.D. Lin ,
A. Scherer ,
B.P. Van Der Gaag ,
M. Koza  and
P. Grabbe
K. Kash
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701–7020
R. Bhat
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701–7020
Derek D. Mahoney
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701–7020
J.M. Worlock
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701–7020
P.S.D. Lin
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701–7020
A. Scherer
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701–7020
B.P. Van Der Gaag
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701–7020
M. Koza
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701–7020
P. Grabbe
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701–7020
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Abstract

We describe here an effort to provide lateral confinement of carriers within a continuous InGaAs quantum well by creating a pattern of strain in the well. A compressed InGaAsP layer overlying the quantum well and the InP barrier was patterned into submicron stressor wires by etching to within approximately 20 nm of the InP barrier. The relaxation of the compression at the edges of the quaternary stressors resulted in dilation of the quantum well material under their centers, thus lowering the band gap of the material, providing confinement for both electrons and holes there. We observed a red shift of the quantum well luminescence of 7 meV for 400 nm wide wires, evidence for the strain-induced lateral confinement. This is the first observation of a red-shifted band gap in submicron strain-confining structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 245
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1 Harbison, James P., to be published in Gallium Arsenide and Related Compounds 1988 (Institute of Physics Conference Series, 1988).Google Scholar
2 Kash, K., Worlock, J.M., Sturge, M.D., Grabbe, P., Harbison, J.P., Scherer, A. and Lin, P.S.D., Appl. Phys. Lett. 53, 782 (1988).CrossRefGoogle Scholar
3 Grabbe, P., Scherer, A., Kash, K., Bhat, R., Harbison, J., Koza, M. and Florez, L., this volume.Google Scholar
4 Kash, K., Bhat, R., Mahoney, Derek D., Lin, P.S.D., Scherer, A., Worlock, J.M., Van der Gaag, B.P., Koza, M. and Grabbe, P., to be submitted to Appl. Phys. Lett.Google Scholar