Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-20T08:51:19.045Z Has data issue: false hasContentIssue false
  • English
  • Français

Strained Quantum Wells for P-channel InGaAs CMOS

Published online by Cambridge University Press:  01 February 2011

Padmaja Nagaiah ,
Vadim Tokranov ,
Michael Yakimov  and
Serge Oktyabrsky
Padmaja Nagaiah
Affiliation:
[email protected], University at Albany, SUNY, College of Nanoscale Science and Engineering, Albany, New York, United States
Vadim Tokranov
Affiliation:
[email protected], University at Albany, SUNY, College of Nanoscale Science and Engineering, Albany, New York, United States
Michael Yakimov
Affiliation:
[email protected], University at Albany, SUNY, College of Nanoscale Science and Engineering, Albany, New York, United States
Serge Oktyabrsky
Affiliation:
[email protected], University at Albany, SUNY, College of Nanoscale Science and Engineering, Albany, New York, United States
Get access

Abstract

We present experimental results on the effect of strain on hole transport in InGaAs quantum well (QW) structures. Indium content was varied from lattice matched to high compressive stress in InGaAs/InP QW and the transport properties were analyzed at various temperatures (T = 77-300 K) using Hall measurements. The effect of QW thickness (4-20 nm) on hole transport is also presented. The current best results include room temperature mobility and sheet resistance of 390 cm2/V-s and 8500 Ω/sq., respectively. It was observed that the mobility had a T-1.8 dependence indicating similar scattering mechanism in almost all of the samples with prominent mechanism being due to interface and barrier scattering. Further optimization of p-channel for InGaAs CMOS needs to be performed using the above results as guidelines.

Keywords

Hall effectIII-Vmolecular beam epitaxy (MBE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1108: Symposium A – Performance and Reliability of Semiconductor Devices , 2008 , 1108-A12-01
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Jaffe, M. and Singh, J., J. Appl. Phys. 65, 1 (1989)Google Scholar
2. Osbourn, G. C., Superlattices and Microstructures 1, 223 (1985)Google Scholar
3. Chuang, S. L., Phys. Rev. B 43, 9649 (1991)Google Scholar
4. Andreani, L. C. et al., Phys. Rev. B 42, 8928 (1990)Google Scholar
5. Fritz, I. J. et al., Appl. Phys. Lett. 48, 24 (1986)Google Scholar
6. People, R. and Bean, J. C., Appl. Phys. Lett. 47, 322 (1985)Google Scholar
7. Kudo, M. et al., J. Crystal Growth 175/176, 910 (1997)Google Scholar
8. Wiley, J. D. and DiDomenico, M. Jr., Phys. Rev. B 2, 2 (1970)Google Scholar
9. Bennett, B. R. et al., Appl. Phys. Lett. 91, 042104 (2007)Google Scholar
10. Kelsall, R. W. et al., Semicond. Sci. Technol. 7, 86–91 (1992)Google Scholar
11. Reddy, M. et al., Semicond. Sci. Technol. 5, 628 (1990)Google Scholar