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Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation

Published online by Cambridge University Press:  11 February 2011

Koji Usuda ,
Tomohisa Mizuno ,
Tsutomu Tezuka ,
Naoharu Sugiyama ,
Yoshihiko Moriyama ,
Shu Nakaharai  and
Shin-ichi Takagi
Koji Usuda
Affiliation:
MIRAI Project, ASET, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212–8582, Japan.
Tomohisa Mizuno
Affiliation:
MIRAI Project, ASET, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212–8582, Japan.
Tsutomu Tezuka
Affiliation:
MIRAI Project, ASET, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212–8582, Japan.
Naoharu Sugiyama
Affiliation:
MIRAI Project, ASET, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212–8582, Japan.
Yoshihiko Moriyama
Affiliation:
MIRAI Project, ASET, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212–8582, Japan.
Shu Nakaharai
Affiliation:
MIRAI Project, ASET, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212–8582, Japan.
Shin-ichi Takagi
Affiliation:
MIRAI Project, ASET, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212–8582, Japan.
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Abstract

Strained-Si-On-Insulator (Strained-SOI) MOSFETs are one of the most promising device structures for high speed and/or low power CMOS. In realizing strained-Si MOS LSI, fabrication of strained-Si MOSFETs with small sizes are indispensable and thus, the investigation of the strain relaxation is an important issue. Therefore, the strain relaxation of strained-SOI mesa islands with small active area was investigated in this study. Thin strained-Si films were grown on thin relaxed SiGe-on-insulator (SGOI) structures (x=0.28). The isolation process was carried out by using chemical-dry-etching (CDE) to fabricate samples with small active areas. Using Raman spectroscopy with resolution of > 1 micron meter, strained-Si islands on SGOI substrates with the size of 5 micron meter square were investigated. Rapid-thermal-annealing (RTA) in N2 atmosphere was performed to study the strain relaxation during heating processes. As a result, it was confirmed that the strained-Si layers grown on relaxed SiGe (x=0.28) before and after mesa isolation, down to 5 micron meter in size, had almost no relaxation after the RTA process at 1000°C. Furthermore, it was confirmed that the nano-beam electron diffraction (NBD) measurement showed similar tendency regarding the strain relaxation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 738: Symposium G – Spatially Resolved Characterization of Local Phenomena in Materials and Nanostructures , 2002 , G13.8
Copyright
Copyright © Materials Research Society 2003

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References

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