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Strain Relaxation During Growth Of Epitaxial Fe on Cu(O01)/MgO(001)

Published online by Cambridge University Press:  15 February 2011

B. J. Daniels
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305-2205
N. M. Rensing
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305-2205
J. A. Bain
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305-2205
S. Brennan
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford University, Stanford, CA 94309
B. M. Lairson
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305-2205
A. P. Payne
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305-2205
B. M. Clemens
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305-2205
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Abstract

The strain relaxation of sputter-deposited epitaxial Fe on Cu(001)/MgO(001) was observed in-situ for coverages of I to 200 equivalent monolayers of Fe. Grazing incidence x-ray scattering (GIXS) with synchrotron radiation allowed the precise determination of the in-plane strain in the Fe film. The highest observed elastic strain for the Fe was -10.3% which is in agreement with the lattice parameter mismatch between Fe and Cu for both (001)- and {211}-oriented growth. In-plane rocking curves revealed a bifurcation of the Fe(110) and Fe(220) peaks which is due to the rotation of islands to reduce strain energy. The angle of rotation of these islands was found to depend upon the amount of strain relaxation that had occurred in each island, in agreement with a simple theory for strain relaxation via the creation of a misfit dislocation network. The absence of Fe(200) intensity at small Fe thicknesses, coupled with out-of-plane symmetric and pole figure scans, suggest that Fe islands are tilted out of the plane of the sample about the Fe<110> axes by an angle consistent with Fe{211}-oriented growth. At larger thicknesses Fe(001) growth becomes dominant.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

1. Payne, A.P., Lairson, B.M., Brennan, S., Daniels, B.J., Rensing, N.M., and Clemens, B.M., accepted Phys. Rev. B, (1993).Google Scholar
2. Steigerwald, D.A., Jacob, I., and Egelhoff, W.F. Jr., Surface Science, 202:472–92, (1988).CrossRefGoogle Scholar
3. Koike, J. and Nastasi, M. in Evolution of Thin-Film and Surface Microstructure, edited by Thompson, C.V., Tsao, J.Y., and Srolovitz, D.J. (Mater. Res. Soc. Proc., Pittsburgh, PA, 1991) pp. 13–8.Google Scholar
4. Cochran, J.F., Muir, W.B., Rudd, J.M., Heinrich, B., Celinski, Z., Le-Tran, Tan-Trung, Schwarzacher, W., Bennett, W., and Egelhoff, W.F. Jr., J. of App). Phys., 69:5206–8, (1991).CrossRefGoogle Scholar
5. Heinrich, B., Cochran, J.F., Arrott, A.S., Purcell, S.T., Urquhart, K.B., Dutcher, J.R., and Egelhoff, W.F. Jr., Appl. Phys. A, A49:473–90, (1989).CrossRefGoogle Scholar
6. Lairson, B.M., Payne, A.P., Brennan, S., Rensing, N.M., Daniels, B.J., and Clemens, B.M., submitted Phys. Rev. B, (1993).Google Scholar
7. Dyson, K.W., Dyson, D.J., and Keown, S.R., Interpretation of Electron Diffraction Patterns, (Hilger, London, 1971).Google Scholar
8. Payne, A.P., Brennan, S., and Clemens, B.M., Rev. Sci. Instr., 63:1147, (1992).CrossRefGoogle Scholar
9. Etienne, P., Massies, J., Lequien, S., Cabaner, R., and Petroff, F., J.Crystal Growth, 111:1003, (1991).CrossRefGoogle Scholar
10. Lairson, B.M., Visokay, M., Sinclair, R., and Clemens, B.M., Appl. Phys. Lett., 61:1390, (1992).CrossRefGoogle Scholar
11. Matthews, J.W., in Epitaxial Growth, (Academic Press, New York, NY, 1975), pp. 559609.CrossRefGoogle Scholar
12. Reiss, H., J. of Appl. Phys., 39:5045, (1968).CrossRefGoogle Scholar