Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-25T15:41:22.920Z Has data issue: false hasContentIssue false
  • English
  • Français

Strain Relaxation by Dislocation Arrays in Thin Films

Published online by Cambridge University Press:  15 February 2011

Prita Pant  and
Shefford P. Baker
Prita Pant
Affiliation:
Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Shefford P. Baker
Affiliation:
Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Get access

Abstract

An analytical model for strain relaxation by misfit dislocation arrays in thin films is presented that takes into account all components of the strain tensor, including shear strains. The model is developed for (001) films and applied to strain relaxation in (011) oriented FCC metal films. Our results show that shear strains strongly influence the total strain energy of the film. Since both the critical strain for dislocation formation, and the equilibrium spacing of dislocations in arrays depend on the minimum energy values, these quantities are found to be different from those predicted by previous models. This model is useful for understanding both critical strain data and strain relaxation in films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 779: Symposium W – Multiscale Phenomena in Materials - Experiments and Modeling Related to Mechanical Behavior , 2003 , W5.25
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Frank, F. C. and derMerwe, J. H. van, Proc. Roy. Soc. (London)A 198, 216 (1949).Google Scholar
2 Matthews, J. W. and Blakeslee, A. E., Journal of Crystal Growth 29, 273 (1975).Google Scholar
3 Nix, W. D., Met. Trans. A 20A, 2217 (1989).Google Scholar
4 Willis, J. R., Jain, S. C., and Bullough, R., Phil. Mag. A 62, 115 (1990).Google Scholar
5 Freund, L. B., Advances in Applied Mechanics 30, 1 (1994).Google Scholar
6 Matthews, J. W., Mader, S., and Light, T. B., J. Appl. Phys. 41, 3800 (1970).Google Scholar
7 Matthews, J. W. and Blakeslee, A. E., Journal of Crystal growth 27, 118 (1974).Google Scholar
8 Freund, L. B., J. Appl. Mech. 54, 553 (1987).Google Scholar
9 Jain, S. C., Gosling, T. J., Willis, J. R., Totterdell, D. H. J., and Bullough, R., Phil. Mag. A 65, 1151 (1992).Google Scholar
10 Pant, P., and Baker, Shefford P., manuscript in preparation.Google Scholar
11 Pant, P., Schwarz, K. W., and Baker, Shefford P., Acta Mater. 51, 3243 (2003).Google Scholar
12 Stach, E. A., Dahmen, U., and Nix, W. D., in Mater. Res. Soc. Symp. Proc. 619, 27 (2000).Google Scholar