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Strain Relaxation at Low Misfits: Dislocation Injection vs. Surface Roughening

Published online by Cambridge University Press:  21 February 2011

D.D. Perovic ,
B. Bahierathan ,
D.C. Houghton ,
H. Lafontaine  and
J.-M. Baribeau
D.D. Perovic
Affiliation:
Department of Metallurgy and Materials Science, University of Toronto, Toronto M5S 1A4 Canada;, Email: [email protected]
B. Bahierathan
Affiliation:
Department of Metallurgy and Materials Science, University of Toronto, Toronto M5S 1A4 Canada;, Email: [email protected]
D.C. Houghton
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa K1A 0R6 Canada.
H. Lafontaine
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa K1A 0R6 Canada.
J.-M. Baribeau
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa K1A 0R6 Canada.
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Abstract

Two competing strain relaxation mechanisms, namely misfit dislocation generation and surface roughening, have been extensively studied using the GexSi1-x/Si (x< 0.5) system as an example. A predictive model has been developed which accurately describes the nature of misfit dislocation nucleation and growth under non-equilibrium conditions. Using optical and electron microscopy, coupled with a refined theoretical description of dislocation nucleation, it is shown that strain relieving dislocations are readily generated at low misfits with a characteristic activation energy barrier regardless of the growth technique employed (i.e. MBE, RTCVD and UHVCVD). Secondly we have studied the alternative elastic strain relaxation mechanism involving surface undulation; x-ray diffraction, electron and atomic force microscopy have been used to characterize GexSi1-x/Si (x<0.5) structures grown by UHVCVD and MBE at relatively higher temperatures. A theoretical model has been used to model the critical thickness for surface wave generation. The conditions governing the interplay between dislocation formation and surface buckling are described in terms of a "morphological instability diagram".

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 325
Copyright
Copyright © Materials Research Society 1996

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References

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