Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-20T04:55:56.119Z Has data issue: false hasContentIssue false
  • English
  • Français

Strain Modulation of β-FeSi2 by Ge-Segregation in Solid-Phase Growth of [a-Si/a-FeSiGe]n Multi-Layer

Published online by Cambridge University Press:  01 February 2011

Y. Murakami ,
A. Kenjo ,
T. Sadoh ,
T. Yoshitake ,
M. Itakura  and
M. Miyao
Y. Murakami
Affiliation:
Department of Electronics, Kyushu University, 6–10–1 Hakozaki, Fukuoka 812–8581, Japan
A. Kenjo
Affiliation:
Department of Electronics, Kyushu University, 6–10–1 Hakozaki, Fukuoka 812–8581, Japan
T. Sadoh
Affiliation:
Department of Electronics, Kyushu University, 6–10–1 Hakozaki, Fukuoka 812–8581, Japan
T. Yoshitake
Affiliation:
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga 816–8580, Japan
M. Itakura
Affiliation:
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga 816–8580, Japan
M. Miyao
Affiliation:
Department of Electronics, Kyushu University, 6–10–1 Hakozaki, Fukuoka 812–8581, Japan
Get access

Abstract

Strain modulation of β-FeSi2 by Ge doping was investigated. By solid-phase growth of [a-Si/a-Fe0.4Si0.5Ge0.1]n layered structures, the [a-SiGe/β-FeSi2-xGex]n multi-layered structures (n=1, 2, 4) were formed after annealing at 700 °C. From the analysis of the x-ray diffraction spectra, it was found that β-FeSi1.3Ge0.7 strained by 0.4–0.5 % was formed for the sample with n=1. This value corresponded to the band gap modulation of 30 meV based on the theoretical calculation. The strains decreased with increasing n, which was due to that segregation of Ge atoms from the a-Fe0.4Si0.5Ge0.1 layers to the a-Si layers became significant with increasing n. After annealing at 800 °C, agglomeration of β-FeSi2 occurred, and nanocrystals of relaxed β-FeSi2 and c-Si0.7Ge0.3 were formed. These new structures are useful for formation of opto-electrical devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 796: Symposium V – Critical Interfacial Issues in Thin Film Optoelectronic and Energy Conversion Devices , 2003 , V2.9
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lange, H., Phys. Stat. Solid. (a) 201, 3 (1997).Google Scholar
2. Murakami, Y., Kido, H., Kenjo, A., Sadoh, T., Yoshitake, T., and Miyao, M., Physica E 16, 505 (2003).Google Scholar
3. Murakami, Y., Tsunoda, I., Kido, H., Kenjo, A., Sadoh, T., Miyao, M., and Yoshitake, T., Nucl. Instrum. Methods B 206, 304 (2003).Google Scholar
4. Leong, D., Harry, M., Reeson, K. J., and Homewood, K. P., Nature 387, 686 (1997).Google Scholar
5. Suemasu, T., Negishi, Y., Takakura, K., and Hasegawa, F., Jpn. J. Appl. Phys. 39 (2000) L1013.Google Scholar
6. Miglio, L. and Meregalli, V., J. Vac. Sci. Technol. B 16, 1604 (1998).Google Scholar
7. Chen, H., Han, P., Huang, X. D., Hu, L. Q., and Zheng, Y. D., Appl. Phys. Lett. 69, 1912 (1996).Google Scholar
8. Migas, D. B. and Miglio, L., Phys. Rev. B 62, 11063 (2000).Google Scholar