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Strain Measurement in Two-Dimensional Nanoscale Si Gratings by High Resolution X-Ray Diffraction

Published online by Cambridge University Press:  15 February 2011

So Tanaka ,
Christopher C. Umbach ,
Qun Shen  and
Jack M. Blakely
So Tanaka
Affiliation:
Department of Materials Science & Engineering, Cornell University, Ithaca, New York 14853
Christopher C. Umbach
Affiliation:
Department of Materials Science & Engineering, Cornell University, Ithaca, New York 14853
Qun Shen
Affiliation:
Cornell High Energy Synchrotron Source (CHESS) and School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853
Jack M. Blakely
Affiliation:
Department of Materials Science & Engineering, Cornell University, Ithaca, New York 14853
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Abstract

The strain induced by thermal oxidation in a cylindrical silicon (Si) structure has been studied by high resolution synchrotron x-ray diffraction. The strain in the structure studied is expected to display some of the features that exist in three-dimensional non-planar surfaces in electronic devices. The sample consisted of a 2-dimensional array, with period of 300nm, of approximately cylindrical pillars covered with a thin thermal oxide (thickness ∼6nm). These showed a tensile strain of 3.7×10-4 at room temperature. This strain can be relaxed elastically by chemical removal of the oxide. Process simulation indicates the importance of both the contribution due to interface stress during the oxide growth and stress due to differential thermal contraction during the cooldown. Significant differences exist between the strain in such cylindrical pillars and in a flat wafer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 109
Copyright
Copyright © Materials Research Society 1996

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