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Strain Evaluation of GaAs Layers Grown on Ultrahigh-Pressure-Annealed Strain-Free GaAs-On-Si Structures

Published online by Cambridge University Press:  10 February 2011

Takehito Jimbo  and
Hiroshi Ishiwara
Takehito Jimbo
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midoriku, Yokohama 226, Japan
Hiroshi Ishiwara
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midoriku, Yokohama 226, Japan
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Abstract

In order to form strain-free GaAs films on Si substrates, GaAs-on-Si structures have been formed by molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD) and subsequently annealed under ultrahigh pressure at 2 GPa. The samples were then reannealed at atmospheric pressure in order to investigate the regeneration effect of strain in the GaAs films. It was found from X-ray diffraction (XRD) analysis and photoluminescence (PL) measurement that in the reannealed samples the strain near the surface of GaAs film was smaller than that near the interface with Si. Finally, additional GaAs layers were grown using MBE on both as-grown and strain-free GaAs-on-Si structures and it was found that the residual strain in the GaAs layer on strain-free GaAs-on-Si structure was smaller than in the as-grown case.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 397
Copyright
Copyright © Materials Research Society 1998

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