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Strain compensation effect on stacked InAs self-assembled quantum dots embedded in GaNAs layers

Published online by Cambridge University Press:  01 February 2011

Ryuji Oshima ,
Takayuki Hashimoto ,
Hidemi Shigekawa  and
Yoshitaka Okada
Ryuji Oshima
Affiliation:
[email protected], Institute of Apllied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki, 306-8573, Japan, +81-29-853-6902, +81-29-853-6902
Takayuki Hashimoto
Affiliation:
[email protected], Institute of Applied Physics, University of Tsukuba, Japan
Hidemi Shigekawa
Affiliation:
[email protected], Institute of Applied Physics, University of Tsukuba, Japan
Yoshitaka Okada
Affiliation:
[email protected], Institute of Applied Physics, University of Tsukuba
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Abstract

We have studied the effect of strain compensation in multiple stacking of InAs self-assembled quantum dots on GaAs (001) substrates grown by atomic hydrogen assisted RF-molecular beam epitaxy. The GaNxAs1−x material was used as a strain compensating spacer layer. We confirmed by high resolution x-ray diffraction measurements that a 40 nm GaN0.005As0.995 strain compensating layer provides compressive strain to compensate for tensile strain induced by 2.0 ML InAs quantum dots. Consequently, we achieved a multiple stack of InAs QDs up to 30 layers without formation of coalesced QDs, and the density of QDs exceeded 1012 cm−2.

Keywords

self-assemblymolecular beam epitaxy (MBE)semiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE03-01
Copyright
Copyright © Materials Research Society 2006

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References

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