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Strain Adjustment in Si/Sige Superlattices

Published online by Cambridge University Press:  26 February 2011

E. Kasper ,
H.-J. Herzog ,
H. Jorke  and
G. Abstreiter
E. Kasper
Affiliation:
AEG Research Center Ulm, Sedanstr. 10, D-7900 Ulm, FRG
H.-J. Herzog
Affiliation:
AEG Research Center Ulm, Sedanstr. 10, D-7900 Ulm, FRG
H. Jorke
Affiliation:
AEG Research Center Ulm, Sedanstr. 10, D-7900 Ulm, FRG
G. Abstreiter
Affiliation:
Technical University, Munich, Physics Dept., D-8046 Garching, FRG
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Abstract

The performance of future microelectronic circuits will be strongly enhanced by the monolithic integration of superlattice devices with convenventional integrated circuits ontop of a silicon substrate. With this material concept the mismatch between the superlattice materials and the silicon substrate has to be accommodated. SiGe/Si is a model system for the study of mismatch effects because of similar chemistry and well pronounced strain effects.

Growth of SiGe/Si strained layer superlattices (SLS) by molecular beam epitaxy is reported. Adjustment of strain within the superlattice influences strongly the stability and band ordering of the SLS. SiGe/Si superlattices with strain symmetrization exhibit good thermodynamic stability and band ordering of type II. The concept of strain symmetrization by a thin homogeneous buffer layer is explained. Design rules for a virtual substrate consisting of the actual substrate with the thin buffer layer on it are given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 393
Copyright
Copyright © Materials Research Society 1988

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References

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