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STM Investigations of Confined Transition Metal Chalcogenide Colloidal Particles

Published online by Cambridge University Press:  10 February 2011

F. Kivuitu
Affiliation:
Department of Chemistry, Seton Hall University, South Orange NJ 07079
S. P. Kelty
Affiliation:
Department of Chemistry, Seton Hall University, South Orange NJ 07079
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Abstract

The chemical reactivity of catalytic surfaces often arises from a unique crystal or electronic structure confined to the first few atomic layers. Scanning Tunneling Microscopy (STM) is particularly well suited to studying the spatially confined structural properties of such systems. In this paper, I report recent advances in the characterization of colloidal layered transition metal chalcogenides using STM. These particles mimic the surface (layer edge) properties of bulk catalytic materials. It is found that the materials adopt distinct equilibrium chemical and electronic structures as compared to the bulk. The possible significance of these novel structures in regard to the bulk catalytic functionality of the parent material will be briefly discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] Chianelli, R. R., Prestridge, E. B., Pecoraro, T. A., DeNeufville, J. P., Science 203, p. 1105 (1979).Google Scholar
[2] Gutierrez, M., Henglein, A., Ultrasonics 27, p. 259 (1989).Google Scholar
[3] Rubtsova, N. A., Khairutdinov, R. F., Kosta, S. B., Colloid J Russ Acad Sci-Engl 55, p. 446 (1993).Google Scholar
[4] Feldman, Y., Wasserman, E., Srolovitz, D. J., Terme, R., Science 267, p. 222 (1995).Google Scholar
[5] Mulley, S., Sironi, A., DeStefanis, A., Tomlinson, A. A. G., Journal of Materials Chemistry 6, p. 661 (1996).Google Scholar
[6] Homyonfer, M., Mastai, Y., Hershfinkel, M., Volterra, V., Hutchison, J. L., Tenne, R., Journal of the American Chemical Society 118, p. 7804 (1996).Google Scholar
[7] Xu, T., Zhang, Z. J., Zhao, J. Z., Xue, Q. J., Materials Research Bulletin 31, p. 345 (1996).Google Scholar
[8] JoseYacaman, M., Lopez, H., Santiago, P., Galvan, D. H., Garzon, I. L., Reyes, A., Applied Physics Letters 69, p. 1065 (1996).Google Scholar
[9] Joensen, P., Frindt, R. F., Morrison, S. R., Mat. Res. Bull. 21, p. 457 (1986).Google Scholar
[10] Qin, X. R., Yang, D., Frindt, R. F., Irwin, J.C., Phys. Rev. B 44, p. 3490 (1991).Google Scholar
[11] Wilcoxon, J. P., Samara, G. A., Physical Review B Condensed Matter 51, p. 7299 (1995).Google Scholar
[12] Evans, B. L., Young, P. A., Proc. Royal Soc. London A 198, p. 74 (1967).Google Scholar
[13] Frindt, R. F., Yoffe, A.D., Proc. Royal Soc. London A 273, p. 69 ( 1963).Google Scholar
[14] Wilson, J. A., Yoffe, A. D., Adv. Phys. 18, p. 193 (1969).Google Scholar
[15] Jaegermann, W., Tributsch, H., Prog. Surf. Sci. 29, p. 1 (1988).Google Scholar
[16] Lu, E., Persans, P. D., Ruppert, A. F., Chianelli, R. R., Mater. Res. Soc. Symp. Proc. (1990).Google Scholar
[17] Wu, X. L., Lieber, C. M., Prog. Inorg. Chem. 39, p. 431 (1991).Google Scholar
[18] Coleman, R. V., Dai, Z., McNairy, W. W., Slough, C. G., Wang, C., in Benedek, G. (Ed.): Surface Properties of Layered Structures, Vol. 16, Kluwer Scientific Publishers, Dordrecht, Boston, London 1992, p. 27.Google Scholar
[19] Tersoff, J., Hamann, D. R., Phys. Rev. B 31, p. 805 (1985).Google Scholar
[20] Tersoff, J., Phys. Rev. Lett. 57, p. 440 (1986).Google Scholar
[21] Parkinson, B. A., Ren, J., Whangbo, M. H., J. Am. Chem. Soc 113, p. 7833 (1991).Google Scholar
[22] Ren, J., Whangbo, M. H., Bengel, H., Cantow, H. J., Magonov, S. N., Chem. Mater 5, p. 1018 (1993).Google Scholar
[23] Kelty, S. P., Ruppert, A. F., Chianelli, R. R., Ren, J., Whangbo, M. H., J. Am. Chem. Soc 116, p. 7857 (1994).Google Scholar
[24] Roxlo, C. B., Chianelli, R. R., Deckman, H. W., Ruppert, A. F., Wong, P. P., J. Vac. Sci. Technol., A 5(4, Pt. 1), p. 555 (1987).Google Scholar