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STM Image Simulation: Effect of the Number of Tunneling States and the Isosurface Value

Published online by Cambridge University Press:  01 February 2011

Juan Radilla
Affiliation:
Area de Fisicoquímica Teórica, Departamento de Química, División de Ciencias Básicas e, Ingeniería, Universidad Autónoma Metropolitana-Iztapalapa, Av. San Rafael Atlixco No. 186, Col. Vicentina, CP 09340, México, D. F., México.
Marcelo Galván
Affiliation:
Area de Fisicoquímica Teórica, Departamento de Química, División de Ciencias Básicas e, Ingeniería, Universidad Autónoma Metropolitana-Iztapalapa, Av. San Rafael Atlixco No. 186, Col. Vicentina, CP 09340, México, D. F., México.
Yolanda Trinidad-Reyes
Affiliation:
Laboratorio de Nanotecnología, e Ingeniería Molecular, Area de Electroquímica, Departamento de Química, División de Ciencias, Básicas e Ingeniería, Universidad Autónoma Metropolitana-Iztapalapa, Av. San Rafael Atlixco No. 186, Col. Vicentina, CP 09340, México, D. F., México.
Nikola Batina
Affiliation:
Laboratorio de Nanotecnología, e Ingeniería Molecular, Area de Electroquímica, Departamento de Química, División de Ciencias, Básicas e Ingeniería, Universidad Autónoma Metropolitana-Iztapalapa, Av. San Rafael Atlixco No. 186, Col. Vicentina, CP 09340, México, D. F., México.
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Abstract

In this work, Scanning Tunneling Microscopy (STM) images were simulated for the organic molecule 3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA) to study the effect of the number of tunneling states and the integrated Local Density of States (LDOS) isosurface value. Local Density Approximation of Density Functional Theory (DFT-LDA) calculations were performed to achieve the simulated images under the Tersoff and Hamann approximation. The number of tunneling states has a strong effect on the image appearance of the patterns. Intermediate isosurface values for the integrated LDOS produce good resolution and matching in relation to the experimental STM image. Both parameters seem to be of significant importance for STM image simulation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Tersoff, J., and Hamann, D. R.. “Theory and Application of the Scanning Tunneling Microscope”, Phys. Rev. Lett. 50:19982001, 1983.Google Scholar
2. Chen, C. J.. Introduction to Scanning Tunneling Microscopy, Oxford University Press, New York 1993.Google Scholar
3. Wang, F., Sorescu, D. C., and Jordan, K. D.. “Theoretical Calculations of Voltage-Dependent STM Images of Acetylene on the Si(001)”, J. Phys. Chem. B 2002, 106, 13161321.Google Scholar
4. Wang, Z., Zeng, Q., Luan, Y., Wu, X., Wan, L., Wang, C., Lee, G.U., Yin, S., Yang, J., and Bai, C.. “Voltage-Dependent Scanning Tunneling Microscopy Images of a Copper Complex on Graphite”, J. Phys. Chem. B 2003, 107, 1338413388.Google Scholar
5. Gaussian 98, Revision A.7, Frisch, M. J., Trucks, G. W., Schlegel, H. B., Scuseria, G. E., Robb, M. A., Cheeseman, J. R., Zakrzewski, V. G., Montgomery, J. A. Jr, Stratmann, R. E., Burant, J. C., Dapprich, S., Millam, J. M., Daniels, A. D., Kudin, K. N., Strain, M. C., Farkas, O., Tomasi, J., Barone, V., Cossi, M., Cammi, R., Mennucci, B., Pomelli, C., Adamo, C., Clifford, S., Ochterski, J., Petersson, G. A., Ayala, P. Y., Cui, Q., Morokuma, K., Malick, D. K., Rabuck, A. D., Raghavachari, K., Foresman, J. B., Cioslowski, J., Ortiz, J. V., Baboul, A. G., Stefanov, B. B., Liu, G., Liashenko, A., Piskorz, P., Komaromi, I., Gomperts, R., Martin, R. L., Fox, D. J., Keith, T., Al-Laham, M. A., Peng, C. Y., Nanayakkara, A., Gonzalez, C., Challacombe, M., Gill, P. M. W., Johnson, B., Chen, W., Wong, M. W., Andres, J. L., Gonzalez, C., Head-Gordon, M., Replogle, E. S., and Pople, J. A., Gaussian, Inc., Pittsburgh PA, 1998.Google Scholar
6. Insight II Version 4.0.0, Molecular Simulations, Inc., 1996.Google Scholar
7. Kunitake, M., Akiba, U., Batina, N. and Itaya, K.. “Structures and Dynamics Formation Processes of Porphyrin Adlayers on Iodine-Modified Au(111) in Solution: In Situ STM Study”. Langmuir 13:1607, 1997.Google Scholar