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STM Characterization of Low Dimensional Surface Electronic Properties of Undoped Diamond in Buffer Solutions

Published online by Cambridge University Press:  01 February 2011

Nianjun Yang ,
Hiroshi Uetsuka ,
Takatoshi Yamada  and
Christoph E. Nebel
Nianjun Yang
Affiliation:
[email protected], AIST, DRC, Central 2, 1-1-1 Umezono, Tsukuba, 305-8568, Japan, +81-29-861-4836
Hiroshi Uetsuka
Affiliation:
[email protected], Diamond Research Center/AIST, Tsukuba, 305-8568, Japan
Takatoshi Yamada
Affiliation:
[email protected], Diamond Research Center/AIST, Tsukuba, 305-8568, Japan
Christoph E. Nebel
Affiliation:
[email protected], Diamond Research Center/AIST, Tsukuba, 305-8568, Japan
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Abstract

Diamond is a promising semiconductor which shows some unique surface electronic features if grown optimized with low bulk and surface defect densities. The appearance of a highly conducting surface layer if immersed into electrolyte solution is maybe the most striking feature. Scanning tunneling microscopy experiments on diamond in electrolyte solutions are applied to determine the electronic properties governing these transition. These experiments reveal the formation of unoccupied quantized electronic states in the valence band close to the surface. A two-dimensional density of state distribution with three levels from light-, heavy-, and split-off-band holes is detected. Removal of the electrolyte causes a reversible transition into the insulating state and vice versa.

Keywords

diamondelectrical propertiesscanning probe microscopy (SPM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1039: Symposium P – Diamond Electronics–Fundamentals to Applications II , 2007 , 1039-P14-03
Copyright
Copyright © Materials Research Society 2008

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