Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-29T09:20:02.392Z Has data issue: false hasContentIssue false
  • English
  • Français

Stimulated Emission from Single- and Multiple-Quantum-Well GaN-AlGaN Separate-Confinement Heterostructures

Published online by Cambridge University Press:  10 February 2011

D. A. S. Loeber ,
N. G. Anderson ,
J. M. Redwing ,
J. S. Flynn ,
G. M. Smith  and
M. A. Tischler
D. A. S. Loeber
Affiliation:
Department of Electrical and Computer Engineering, University of Massachusetts at Amherst, Amherst, MA 01003
N. G. Anderson
Affiliation:
Department of Electrical and Computer Engineering, University of Massachusetts at Amherst, Amherst, MA 01003
J. M. Redwing
Affiliation:
Epitronics, 7 Commerce Drive, Danbury, CT 06810
J. S. Flynn
Affiliation:
Epitronics, 7 Commerce Drive, Danbury, CT 06810
G. M. Smith
Affiliation:
Epitronics, 7 Commerce Drive, Danbury, CT 06810
M. A. Tischler
Affiliation:
Epitronics, 7 Commerce Drive, Danbury, CT 06810
Get access

Abstract

Stimulated emission characteristics are examined for GaN-AlGaN separate-confinement quantum-well heterostructures grown by MOVPE on 4H-SiC substrates. We specifically focus on comparison of structures with different quantum well active region designs. Polarization resolved edge emission spectra and stimulated emission thresholds are obtained under optical pumping using a stripe excitation geometry. Stimulated emission characteristics are studied as a function of the number of quantum wells in the structure, and are correlated with surface photoluminescence properties. We find reduced stimulated emission thresholds and increased surface photoluminescence intensities as the number of quantum wells is reduced, with the best results obtained for a single-quantum-well structure. These results should provide useful information for the design of GaN-based quantum well lasers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1203
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., and Sugimoto, Y., Jpn. J. Appl. Phys. 35, L74 (1996).Google Scholar
2. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., and Kiyoku, H., Appl. Phys. Lett. 69, 1477 (1996).Google Scholar
3. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., and Kiyoku, H., Appl. Phys. Lett. 68, 2105 (1996).Google Scholar
4. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., and Sugimoto, Y., Appl. Phys. Lett. 68, 2105 (1996).Google Scholar
5. Hofmann, R., Gauggel, H.-P., Griesinger, U.A., Grabeldinger, G., Adler, G., Ernst, P., Bolay, H., Harle, V., Scholz, F., Schweizer, H., and Pilkuhn, M.H., Appl. Phys. Lett. 69, 2068 (1996).Google Scholar
6. Redwing, J.M., Loeber, D.A.S., Tischler, M.A., Anderson, N.G., and Flynn, J.S., Appl. Phys. Lett. 69, 1 (1996).Google Scholar
7. Redwing, J.M., Loeber, D.A.S., Tischler, M.A., Anderson, N.G., and Flynn, J.S., in Proceedings of the International Conference on Blue Lasers and Light Emitting Diodes, edited by Yoshikawa, Y., Kishino, K., Dobayashi, M., and Yasuda, T. (Ohmsha Ltd., Tokyo, 1996). pp. 267-270.Google Scholar
8. Loeber, D.A.S., Redwing, J.M., Anderson, N.G., and Tischler, M.A. in Gallium Nitride and Related Compounds, edited by Ponce, F.A., Dupius, R.D., Nakamura, S., and Edmond, J.A. (Mater. Res. Soc. Proc. 395, Pittsburgh, PA 1996), pp. 949-954. Note that, owing to a calibration error, photoexcitation thresholds quoted in this reference were overestimated by a factor of ∼2.5.Google Scholar
9. This analysis assumes Ith(N)= {hv/T[l-exp(αLMQW)]} {L[1/τr + 1/τnr + 2NSI}nth, where Ith is the threshold pump intensity, hv is the pump photon energy, T is the transmission coefficient for the air/semiconductor interface, α is the effective MQW absorption coefficient at the pump photon energy, τr and τnr are the radiative and non-radiative recombination coefficients for the quantum wells, SI is the interface recombination velocity, and nth is the transparency carrier density. Note that the threshold pump intensities of this work are not lasing thresholds: They represent estimates of the pump intensities at which the transparency condition is met.Google Scholar
10. Assuming a 300K radiative lifetime of 0.8 ns, which is obtained from the low temperature data and temperature coefficient given in Ref. 12, a linear fit to our experimental data for Ith(N) extrapolated to N=0 implies a nonradiative lifetime for the quantum well material of 0.15 ns. This yields a quantum well recombination lifetime (less surface recombination) of 0.13 ns.Google Scholar
11. This value is consistent with calculated transparency carrier density estimated for bulk GaN (Chow, W.W., Knorr, A., and Koch, S.W., Appl. Phys. Lett. 67, 754 (1995)) and GaN quantum wells (S. Kamiyama, K. Ohnaka, M. Suzuki, and T. Uenoyama, Jpn. J. Appl. Phys. 31, L821 (1995); A.T. Meney and E.P. O'Reilly, Appl. Phys. Lett. 67, 3013 (1995)).Google Scholar
12. Smith, M., Lin, J.Y., Jiang, H.X., Salvador, A., Botchkarev, A., Kim, W., and Morkoc, H., Appl. Phys. Lett. 69, 2453 (1996).Google Scholar
13. Akasaki, I, Amano, H., Sota, S., Sakai, H., Tanaka, T., and Koide, M., Jpn. J. Appl. Phys. 34, L1577 (1995); M. Koide, S. Yamasaki, S. Nagai, N. Koide, S. Asami, H. Amano, and I. Akasaki, Appl. Phys. Lett. 68, 1403 (1996).Google Scholar