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Steplike Lineshape of Low Temperature Photoreflectance Spectra of InAlAs

Published online by Cambridge University Press:  15 February 2011

Y. Baltagi ,
E. Bearzi ,
C. Bru-Chevallier ,
T. Benyattou ,
G. Guillot  and
J. C. Harmand
Y. Baltagi
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) - INSA de Lyon - Bât 502 -69621 Villeurbanne Cedex, France., [email protected]
E. Bearzi
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) - INSA de Lyon - Bât 502 -69621 Villeurbanne Cedex, France., [email protected]
C. Bru-Chevallier
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) - INSA de Lyon - Bât 502 -69621 Villeurbanne Cedex, France., [email protected]
T. Benyattou
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) - INSA de Lyon - Bât 502 -69621 Villeurbanne Cedex, France., [email protected]
G. Guillot
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) - INSA de Lyon - Bât 502 -69621 Villeurbanne Cedex, France., [email protected]
J. C. Harmand
Affiliation:
CNET Bagneux (France Telecom), 96 av.Henri Ravera, 92220 Bagneux, France.
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Abstract

We have performed low temperature photoreflectance spectra on several MBE-InAlAs layers lattice matched to InP. Unusual lineshapes of PR spectra are observed at temperatures below 40K, characterized by a step at the InAlAs band gap energy. This step is shown to be related to a strong modification of the photo luminescence background of the photoreflectance spectra. This modification is attributed to an effect of carrier localization due to clustering effects in the InAlAs layers

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 333
Copyright
Copyright © Materials Research Society 1996

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