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Step-Edge Barriers, Re-Entrant Oscillations, and Unstable Epitaxial Growth

Published online by Cambridge University Press:  03 September 2012

Dimitri D. Vvedensky  and
Pavel Šmilauer
Dimitri D. Vvedensky
Affiliation:
The Blackett Laboratory, Imperial College, London, SW7 2BZ, United Kingdom
Pavel Šmilauer
Affiliation:
The Blackett Laboratory, Imperial College, London, SW7 2BZ, United Kingdom Interdisciplinary Research Centre for Semiconductor Materials, Imperial College, London, SW7 2BZ, United Kingdom
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Abstract

The influence of step-edge barriers that inhibit the interlayer transport of atoms is discussed in the context of several material systems by using simulations of a solid-on-solid model. We show how the combined effect of this step-edge barrier and a non-thermal short-range incorporation process of freshly-deposited atoms can be used to explain several epitaxial phenomena on metal and semiconductor surfaces: (i) re-entrant oscillations seen with He-atom scattering and high-resolution low-energy electron diffraction during Pt(111) homoepitaxy, (ii) instabilities during growth on GaAs(001) and several metal (001) and (111) surfaces in the form of multilayer features that dynamically coarsen, while maintining their shape, and (iii) re-entrant oscillations during etching of GaAs(001). In (iii), the incorporation is replaced by a short-range search for the atom to be removed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 367: Symposium P – Fractal Aspects of Materials , 1994 , 263
Copyright
Copyright © Materials Research Society 1995

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