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Step-Driven Surface Segregation and Ordering During Si-Ge MBE Growth
Published online by Cambridge University Press: 25 February 2011
Abstract
An important role of type SB step edges in determining the as-grown microstructure of Si-Ge superlattices and alloys is implicated from direct Z-contrast images of as-grown structures. A variety of different ordered phase variants can arise at each Si on Ge interface as a result of vertical segregation during superlattice growth. A new monoclinic-ordered structure is predicted to arise as a result of lateral segregation during alloy growth.
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- Copyright © Materials Research Society 1992