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Step Structures Created on Vicinal Si(111) During Resistive Electrical Heating

Published online by Cambridge University Press:  25 February 2011

R. J. McClelland  and
Y. Homma
R. J. McClelland
Affiliation:
Nippon Telegraph and Telephone Corporation, Applied Electronics Laboratories, Musashino-shi, Tokyo 180 Japan
Y. Homma
Affiliation:
Nippon Telegraph and Telephone Corporation, Applied Electronics Laboratories, Musashino-shi, Tokyo 180 Japan
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Abstract

Scanning reflection electron microscopy was used to examine step structures which form on vicinal Si(111) specimens during resistive electrical heating under ultrahigh vacuum. Heating-current-induced step bunching occurred, forming substantially linear step-bands in specific temperature regions. Small pinning points disrupted the linearity of steps. The interaction between step-bands and large pinning points resulted in the formation of macrosteps, which showed some stability against dispersal during current reversal. Ion-etched grooves influenced step orientation during current-induced step migration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 347
Copyright
Copyright © Materials Research Society 1991

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References

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