Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-25T17:54:13.089Z Has data issue: false hasContentIssue false

Stark Shift and Field Induced Tunneling in Doped Quantum Wells with Arbitrary Potential Profiles

Published online by Cambridge University Press:  10 February 2011

S. Panda
Affiliation:
Department of Physics, The University of Hong Kong, Hong Kong
B. K. Panda
Affiliation:
Department of Physics, The University of Hong Kong, Hong Kong
S. Fung
Affiliation:
Department of Physics, The University of Hong Kong, Hong Kong
C. D. Beling
Affiliation:
Department of Physics, The University of Hong Kong, Hong Kong
Get access

Abstract

The energies and resonance widths of single doped quantum wells consisting of Al-GaAs/GaAs with rectangular and annealing induced diffusion modified shapes are calculated under an uniform electric field using the stabilization method. The electronic structure is calculated without an electric field in the finite temperature density functional theory with exchange-correlation potential treated in the local density approximation. Our scheme for solving the Schrödinger and Poisson equations is based on the Fourier series method. The electric field is added to the self-consistent potential and energies are obtained as a function of the combined width of the well and barriers. This yields us the stabilization graph from which the energies and resonance widths at different field strengths are extracted using the Fermi Golden rule.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Loehr, J. P. and Manasreh, M. O., Semiconductor quantum wells and superlattices for long wave length infrared detectors (Artech House, C1993, Ed. Manasreh, M. O.) p-19 Google Scholar
[2] Bastard, G., Wave mechanics applied to semiconductor heierostructures (Les Editions de Physique, C1988)Google Scholar
[3] Kohn, W. and Sham, L. J., Phys. Rev. 140, A1133 (1965)Google Scholar
[4] Huang, D., Gumbs, G. and Manasreh, M. O., Phys. Rev. B52, 14126 (1995)Google Scholar
[5] Panda, S., Panda, B. K., Fung, S. and Beling, C. D., Solid State Commun. 99, 299 (1996)Google Scholar
[6] Hedin, L. and Lundqvist, B. I., J. Phys. C 4, 2064 (1971)Google Scholar
[7] Kanhere, D. G., Panât, P. V., Rajgopal, A. K. and Callaway, J., Phys. Rev. A 33, 490 (1986)Google Scholar
[8] Borondo, F. and Sánchez-Dehesa, J., Phys. Rev. B33, 8758 (1986)Google Scholar
[9] Mácias, A. and Riera, A., J. Chem. Phys. 96, 2877 (1992)Google Scholar
[10] Chuang, L. L. and Koma, A., Appl. Phys. Lett. 29, 138 (1976)Google Scholar
[11] Mukai, K., Sugawara, M. and Yamazaki, S., Phys. Rev. B 50, 2273 (1994)Google Scholar
[12] Abramowitz, M. and Stegun, I. A., Handbook of Mathematical Function, Washington DC (National Bureau of Standards, Washington, DC, 1964) p. 446 Google Scholar