Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-25T18:50:15.287Z Has data issue: false hasContentIssue false
  • English
  • Français

Stability of the Fullerenes Thin Film Deposited on the SI(100) Surface

Published online by Cambridge University Press:  15 February 2011

H. Rafii-Tabar ,
Y. Kawazoe  and
H. Kamiyama
H. Rafii-Tabar
Affiliation:
Institute For Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980, JAPAN
Y. Kawazoe
Affiliation:
Institute For Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980, JAPAN
H. Kamiyama
Affiliation:
Institute For Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980, JAPAN
Get access

Abstract

We have performed a constant temperature classical molecular dynamics simulation of the epitaxial growth of a C60 monolayer film deposited on the dimerized Si(100) surface. Our simulation, based on non-central many-body inter-atomic potentials, is capable of predicting the structural stability of the C60 film and the Si substrate and provides a theoretical basis for the results of a recently-performed STM- based experiment for this system.

Three-dimensional geometries have been generated on computer and used for the animation of the simulation runs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 467
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Tanigaki, K. et al. , Nature 352, 222 (1991).Google Scholar
2 Yannoni, C.S. et al. , J.Phys. Chem. 95, 9(1991).Google Scholar
3 Saito, S. and Oshiyama, A., Phys. Rev. Lett, 66, 2637 (1991).Google Scholar
4 Jishi, R.A., Mine, R.M., and Dresselhaus, M.S., Phys. Rev., B,45, 13685 (1992).CrossRefGoogle Scholar
5 Cheng, A. and Klein, M., Phys. Rev., B,45, 1889 (1992).Google Scholar
6 Abrefah, J. et al. , Appl. Phys. Lett. 60, 1313 (1992).Google Scholar
7 Wilson, R.J. et al. , Nature 348, 621 (1990).Google Scholar
8 Li, Y.Z. et al. , Science 253, 429 (1991).Google Scholar
9 Hashizume, T. et al. , Jpn. J. Appl. Phys. 31, L880 (1992).Google Scholar
10 Tersoff, J., Phys. Rev. B,39, 5566(1989).Google Scholar
11 Allen, M.P. and Tildesley, D.J., Computer Simulation of liquids (Clarendon Press Oxford, 1987).Google Scholar