Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-03T03:15:36.917Z Has data issue: false hasContentIssue false
  • English
  • Français

Stability in Electrical Properties of Ultra Thin Tin Oxide Films

Published online by Cambridge University Press:  14 March 2011

Yuji Matsui ,
Yuichi Yamamoto  and
Satoshi Takeda
Yuji Matsui
Affiliation:
New Products Development Center, Fabricated Glass General Div., Asahi Glass Co., Ltd. 426-1 Sumida, Aikawa-cho, Aikou-gun, Kanagawa, 243-0301, Japan
Yuichi Yamamoto
Affiliation:
R&D Center, Asahi Glass Co., Ltd. 1150 Hazawa-cho, Kanagawa-ku, Yokohama-shi, Kanagawa 221, Japan
Satoshi Takeda
Affiliation:
R&D Center, Asahi Glass Co., Ltd. 1150 Hazawa-cho, Kanagawa-ku, Yokohama-shi, Kanagawa 221, Japan
Get access

Abstract

Tin Oxide films of less than 30nm in thickness were developed as transparent conductive electrodes. The films were deposited onto glass substrates by APCVD. Fluorine was used as a doping component. Stability to heat treatments in air at more than 500• was studied. Carrier concentration decreased and Hall mobility increased by the heat treatments. It was found relations between carrier concentration and mobility exhibited an exponential relation in extremely low fluorine concentration films. The exponent of the relation was close to −1.5. Resistivity decreased for the films, while it increased for films with high fluorine concentration. It was also found migration of sodium from the substrates into the films increased with increase of fluorine concentration in the films. Results suggest the sodium migration would affect grain growth and electrical properties of the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , Q4.9.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Blocher, J.M. Jr., Thin Solid Films. 77, 51 (1981)Google Scholar
2. Ghoshtagore, R.N., J. Electrochem. Soc. 125 (1), 110 (1978)Google Scholar
3. Mizuhashi, M., Goto, Y., and Adachi, K., Jpn J. Appl. Phys. 27 (11), 2053 (1988)Google Scholar
4. Goto, Y., Adachi, K. and Mizuhashi, M., Asahi Garasu Kenkyu Houkoku (Rept. Res. Lab. Asahi Glass Co., Ltd.) 37 (1), 13 (1987)Google Scholar
5. Sato, K., Goto, Y., Hayashi, Y., Adachi, K., and Nishimua, H., Asahi Garasu Kenkyu Houkoku (Rept. Res. Lab. Asahi Glass Co., Ltd.) 40 (2), 233 (1990)Google Scholar
6. Iida, H., Shiba, N., Mishuku, T., Karasawa, H., Ito, A., Yamanaka, M., and Hayashi, Y., IEEE Electron Device Lett. ED–27, 157 (1980)Google Scholar
7. Goto, Y., and Mizuhashi, M., Asahi Garasu Kenkyu Houkoku (Rept. Res. Lab. Asahi Glass Co., Ltd.) 34 (2), 123 (1984)Google Scholar
8. Adachi, K. and Mizuhashi, M., Asahi Garasu Kenkyu Houkoku (Rept. Res. Lab. Asahi Glass Co., Ltd.) 38 (1), 57 (1988)Google Scholar
9. Sato, K., Adachi, K., Hayashi, Y. and Mizuhashi, M., proc. of 12th IEEE Photovoltaic Specialists Conference, Las Vegas, 267 (1988)Google Scholar
10. Matsui, Y. and Goto, Y., submitting to proc. of 1999 MRS Spring Meeting 558, 393 (1999)Google Scholar
11. Wolfe, C.M., Holonyak, N. Jr., and Stillman, G.E., Physical Properties of Semiconductors (PRENTICE HALL, 1989) pp.175–201.Google Scholar