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The Stability Improvement of a-Si:H Films for Photovoltaic Applications

Published online by Cambridge University Press:  10 February 2011

B. G. Budaguan ,
A. A. Aivazov  and
M. N. Meytin
B. G. Budaguan
Affiliation:
Moscow Institute of Electronic Technology, Department of Microtechnology, 103498 Russia, [email protected]
A. A. Aivazov
Affiliation:
Moscow Institute of Electronic Technology, Department of Microtechnology, 103498 Russia, [email protected]
M. N. Meytin
Affiliation:
Moscow Institute of Electronic Technology, Department of Microtechnology, 103498 Russia, [email protected]
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Abstract

The origin of metastability in a-Si:H films deposited at different deposition conditions has been investigated by joint analysis of light-induced defect generation kinetics (Staebler-Wronski Effect) and differential scanning calorimetry (DSC) measurements. Light-induced defect generation kinetics were measured at elevated temperatures of 80–150 °C. DSC measurements were performed in a temperature range of 20 °C – 570°C. The films microstructure were studied by IR spectroscopy analysis.

The simulation of DSC curves has been used to deduce the kinetics of the low-temperature exothermic peak (LTEP) observed at 80–150°C. It was found that kinetic parameters of LTEP and SW effects has the same dependence on microstructure parameters, γ, which suggests their common nature. The analysis of a-Si:H stability improvement concerning the influence of films microstructure on the kinetics of relaxation processes is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 31
Copyright
Copyright © Materials Research Society 1996

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