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Stability Diagrams for Epitaxial Strained Layers

Published online by Cambridge University Press:  25 February 2011

J. Y. Tsao ,
B. W. Dodson  and
S. T. Picraux
J. Y. Tsao
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
B. W. Dodson
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
S. T. Picraux
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

For bulk materials, plastic deformation mechanisms and rates depend in a complex way on resolved shear stress and temperature, but can be succinctly described using the deformation mechanism maps pioneered by Ashby and Frost [1]. In this paper, we describe the use of such maps to demarcate the various stability and metastability regimes of single and multilayered strained epitaxial structures, and to interpret experimental work in the SiGe system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 103 , 1987 , 153
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1Frost, H.J. and Ashby, M.F., Deformation-Mechanism Maps (Pergamon Press, Oxford, 1982).Google Scholar
2Ball, C.A.B. and van der Merwe, J.H., in Dislocations in Solids, Chap. 27, Nabarro, F.R.N., ed. (North-Holland, 1983).Google Scholar
3Matthews, J.W. and Blakeslee, A.E., J. Crystal Growth 27 (1974) 118.Google Scholar
4Dodson, B.W. and Taylor, P.A., Appl. Phys. Lett. 49, 642 (1986).Google Scholar
5Grabow, M.H. and Gilmer, G.H., Mat. Res. Soc. Symp. Proc. 56, 13 (1986).Google Scholar
6Kasper, E., Surf. Science 174 (1986) 630.Google Scholar
7Bean, J.C., Science 230 (11 October 1985) 127.Google Scholar
8Dodson, B.W. and Tsao, J.Y., Appl. Phys. Lett., 51 1325 (1987).Google Scholar
9 For a given microstructure.Google Scholar
10Tsao, J.Y., Dodson, B.W., Picraux, S.T. and Cornelison, D.M., Phys. Rev. Lett. 23 November, 1987.Google Scholar
11Hirth, J.P. and Lothe, J., Theory of Dislocations, 2nd Ed. (Wiley- Interscience, New York, 1982), Eq. 3–87.Google Scholar
12 This excess stress is the driving force for motion of threading dislocations. However, since such motion generates misfit dislocations either directly through elongation at the film/substrate interface, or indirectly through the creation of new threading dislocations in its wake, this stress can also be considered the driving force for strain relief. It is not a measure of the propensity for misfit dislocations to nucleate spontaneously at the interface without threading dislocation intermediaries.Google Scholar
13Dodson, B.W. and Tsao, J.Y., manuscript in preparation.Google Scholar
14Hull, R., Bean, J.C., Cerdeira, F., Fiory, A.T. and Gibson, J.M., Appl. Phys. Lett. 48, 56 (1986).Google Scholar
15Fritz, I.J., Gourley, P.L. and Dawson, L.R., Appl. Phys. Lett. 51, 1004 (1987).Google Scholar