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Stability and Metastability in Semiconductor Strained-Layer Structures

Published online by Cambridge University Press:  25 February 2011

Brian W. Dodson ,
I. J. Fritz ,
S. Thomas Picraux  and
Jeffrey Y. Tsao
Brian W. Dodson
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
I. J. Fritz
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
S. Thomas Picraux
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
Jeffrey Y. Tsao
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
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Abstract

The physics governing stability properties and relaxation of mismatch strain in semiconductor strained-layer structures is reviewed. Experimental data on stability and rates of strain relaxation are examined. We conclude that essentially all observations on structural relaxation of semiconductor strained-layer structures can be explained by standard models of plastic deformation adapted to the special conditions controlling dislocation dynamics in these structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 103 , 1987 , 141
Copyright
Copyright © Materials Research Society 1988

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References

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