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Stability and Decomposition of IV-VI Semiconductor Films.

Published online by Cambridge University Press:  21 February 2011

L. Salamanca–Riba ,
S. Nahm  and
M. Wuttig
L. Salamanca–Riba
Affiliation:
Previously known as L. Salamanca-Young.
S. Nahm
Affiliation:
University of Maryland, College Park, MD 20742–2115, A. Roitburd, University of Maryland, College Park, MD 20742, and National Institute of Standards an Technology, Gaithersburg, MD 20899, Z. Feit, D. Kostyk and R. Woods, Laser Photonics, Bedford, MA 1730–2392.
M. Wuttig
Affiliation:
University of Maryland, College Park, MD 20742–2115, A. Roitburd, University of Maryland, College Park, MD 20742, and National Institute of Standards an Technology, Gaithersburg, MD 20899, Z. Feit, D. Kostyk and R. Woods, Laser Photonics, Bedford, MA 1730–2392.
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Abstract

Pb1−xEuxTe alloys with 0.41 ≤ x ≤ 0.51 have been observed to be unstable when grown at a temperature of 573K on BaF2 substrates. The alloys are stabilized when a buffer layer of PbTe is grown prior to the growth of the Pb1−xEuxTe alloy. In this work, we have observed tha the solid solution of Pb1−xEuxTe with x ≈ 0.5 can also be stabilized by increazing the growth temperature to 623K. Our results suggest that the critical temperature for decomposition is in the range 573–623K. We present a qualitative phase diagram for Pb1−xEuxTe alloy films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 187: Symposium J – Thin Film Structures and Phase Stability , 1990 , 47
Copyright
Copyright © Materials Research Society 1990

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References

[1] Salamanca-Young, L., Nahm, S., Wuttig, M., Partin, D.L., and Heremans, J., Phys. Rev. B 39, 10995 (1989).Google Scholar
[2] Fukui, T., and Saito, H., Jpn. J. Appl. Phys. part 2 23, 521 (1984).Google Scholar
[3] Cohen, R.M., Cherng, M.J., Benner, R.E. and Stringfellow, G.B., J. Appl. Phys. 57, 4817 (1985).Google Scholar
[4] Stringfellow, G. B., J. Electron. Mater. 11, 903 (1982).Google Scholar
[5] Cahn, J. W., Acta. Metall. 9, 795 (1961).Google Scholar
[6] Salamanca-Young, L., Partin, D.L., and Heremans, J., J. Appl. Phys. 63, 1504 (1988).Google Scholar
[7] Salamanca-Young, L., Wuttig, M., Partin, D.L. and Heremans, J., Mat. Res. Soc. Symp. Proc. Vol.103 on Multilayers: Synthesis, Properties and Non-Electronic Applications, (ed. by Barbee, T.W. Jr., Spaepen, F. and Greer, L. Mats. Res. Soc., Pittsburg, PA, 1988) pp. 133.Google Scholar