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Stability and Crystallization of Amorphous Semiconductor Multilayers

Published online by Cambridge University Press:  25 February 2011

P. D. Persans ,
A. F. Ruppert  and
B. Abeles
P. D. Persans
Affiliation:
Physics Department and Center for Integrated Electronics Rensselaer Polytechnic Institute, Troy, NY 12180–3590
A. F. Ruppert
Affiliation:
Exxon Research and Engineering Company Annandale, NJ 08801
B. Abeles
Affiliation:
Exxon Research and Engineering Company Annandale, NJ 08801
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Abstract

We discuss recent measurements of relaxation, interdiffusion and crystallization in amorphous hydrogenated semiconductors and insulators prepared as periodic multilayers. The stability of multilayer structures depends upon temperature, repeat distance and the nature of the materials. Crystallization of amorphous silicon in amorphous silicon/amorphous silicon dioxide layers is inhibited when the silicon thickness is reduced below 20 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 103 , 1987 , 179
Copyright
Copyright © Materials Research Society 1988

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References

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