Published online by Cambridge University Press: 10 February 2011
Luminescent a-Si:O:C layers were obtained by magnetron co-sputtering and annealing. Maximum photoluminescence intensity is comparable to that of porous silicon. Luminescence maximum is between 1.8 eV and 2.2 eV. X-ray photoelectron spectroscopy (XPS) finds Si-O, C-Si and C-C bonding. Secondary ion mass spectrometry(SIMS) data are presented.