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Spin-Splitting and Effective Mass of the 2-Dimensional Electron Gas in an Al0.6Ga0.4Sb/InAs Single Quantum Well

Published online by Cambridge University Press:  26 February 2011

M. O. Manasreh ,
Godfrey Gumbs ,
C. Zhang ,
I. Lo ,
C. A. Bozada ,
R. W. Dettmer ,
C. E. Stutz ,
K. R. Evans  and
W. C. Mitchel
M. O. Manasreh
Affiliation:
Wright Laboratory, Wright-Patterson Air Force Base, OH 45433–6543, U.S.A.
Godfrey Gumbs
Affiliation:
Department of Physics, Hunter College of the CUNY, 695 Park Avenue, New York, NY 10021, U. S. A.
C. Zhang
Affiliation:
TRIUMF, 4004 Wesbrook Mall, Vancouver, B. C, Canada V6T 2A3
I. Lo
Affiliation:
NRC Fellow, Wright Laboratory, Wright-Patterson Air Force Base, OH 45433–6533, U.S.A.
C. A. Bozada
Affiliation:
Wright Laboratory, Wright-Patterson Air Force Base, OH 45433–6543, U.S.A.
R. W. Dettmer
Affiliation:
Wright Laboratory, Wright-Patterson Air Force Base, OH 45433–6543, U.S.A.
C. E. Stutz
Affiliation:
Wright Laboratory, Wright-Patterson Air Force Base, OH 45433–6543, U.S.A.
K. R. Evans
Affiliation:
Wright Laboratory, Wright-Patterson Air Force Base, OH 45433–6543, U.S.A.
W. C. Mitchel
Affiliation:
Wright Laboratory, Wright-Patterson Air Force Base, OH 45433–6543, U.S.A.
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Abstract

The 2-dimensional electron gas (2DEG) in an Al0.6Ga0.4Sb/InAs single quantum well (SQW) is studied using cyclotron resonance (CR) and Shubnikov - de Haas (SdH) techniques. SdH results show spin-splitting in Landau levels at magnetic field strength (B) as low as 1.5T. The effective mass (m*) of the 2DEG was obtained from the peak positions of the CR transmission spectra. The results exhibit oscillatory behavior as a function of B. The m* value extracted from die temperature dependence of the SdH oscillations is in good agreement with the average value of m* obtained from CR measurements. The effective mass is calculated as a function of B using an electron self-energy model based on the Hartree-Fock approximation. The calculated m* values also show oscillatory behavior similar to that of the measured CR m*. Both experiment and theory show that m* maxima are shifted from the integral values (both odd and even) of the filling factors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 765
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Nakagawa, A., Kroemer, H., and English, J., Appl. Phys. Lett. 54, 1893 (1989).Google Scholar
2. Tuttle, G., Kroemer, H., and English, J. H., J. Appl. Phys. 65, 5239 (1989).CrossRefGoogle Scholar
3. Luo, L. F., Beresford, R., Wang, W. I., and Munekata, H., Appl. Phys. Lett. 55, 789 (1989).Google Scholar
4. Goldberg, B. B., Heiman, D., and Pinczuk, A., Phys. Rev. Lett. 63, 1102 (1989).Google Scholar
5. Nicholas, R. J., Haug, R. J., Klintzing, K. v., and Weimann, G., Phys. Rev. B22, 1294 (1988).CrossRefGoogle Scholar
6. Ando, T., J. Phys. Soc. Jpn. 38, 989 (1975).Google Scholar
7. Englert, Th., Maan, J. C., Uihlein, Ch., Tsui, D. C., and Gossard, A. C., Solid State Commun. 46, 545 (1983).Google Scholar
8. Heitmann, D., Ziesmann, M., Chang, L. L., Phys. Rev. B 24, 7463 (1986).CrossRefGoogle Scholar
9. Das Sarma, S., Solid State Commun, 36, 357 (1980).Google Scholar
10. Thiele, F., Merkt, U., Kotthaus, J. P., Lommer, G., Malcher, F., Rössler, U., and Weimann, G., Solid State Commun. 62, 841 (1987).Google Scholar
11. Richter, J., Sigg, H., Klitzing, K. v., and Ploog, K., Phys. Rev. B39, 6268 (1989).Google Scholar
12. Manasreh, M. O., Fischer, D. W., Evans, K. R., and Stutz, C. E., Phys. Rev. B 43, 9772 (1991).Google Scholar
13. Gumbs, G., Zhang, C., and Manasreh, M. O. (submitted to Phys. Rev. B).Google Scholar
14. Ando, T., Fowler, A. B., and Stern, F., Rev. Mod. Phys. 54, 437 (1981).CrossRefGoogle Scholar
15. Shlesinger, Z., Wang, W. I., and MacDonald, A. H., Phys. Rev. Lett. 58, 73 (1987).CrossRefGoogle Scholar
16. Tuttle, G., Kroemer, H., and English, J. H., Appl, I., Phys. 67, 3032 (1990).Google Scholar
17. Hopkins, P. F., Rimberg, A. J., Westervelt, R. M., Tuttle, G., and Koemere, H., Appl. Phys. Lett. SS, 1428 (1991).Google Scholar
18. Lo, I., Mitchel, W. C., Manasreh, M. O., Stutz, C. E., and Evans, K. R., to be published in the Proceeding of the XV State-of-the-Art Program on Compound Semiconductors. The Electrochemical Society, Inc., New Jersey.Google Scholar