Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-29T09:11:28.302Z Has data issue: false hasContentIssue false
  • English
  • Français

Spin-on Silicon Oxide (Sox): Deposition and Properties

Published online by Cambridge University Press:  25 February 2011

Gerald Smolinsky  and
Vivian Ryan
Gerald Smolinsky
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974–2070
Vivian Ryan
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974–2070
Get access

Abstract

High quality SiO2 films are obtained by spin-coating wafers with a sol/gel of silicic acid in either a 2, 3, or 4-carbon linear-aliphatic alcohol. Some properties of the deposited film depend upon the solvent: such as density, tensile stress, and infrared spectrum. However, Rutherford-back-scattering analysis indicates the O:Si ratio (2.00±05) to be independent of the solvent. The infrared spectrum of the oxide exhibits Si-OSi absorption in the range 1070–1080 cm.−1 depending on the curing temperature and solvent system. (The weaker Si-OSi band is found at 804–810 cm.−1) In addition, low-temperature-cured (<500 °C) films show Si–OH absorption. Films hot-plate baked at 150–350 °C are stable but not fully cured. Films from propanol baked at 400 °C have a refractive index of 1.41–1.42 and a wet-etching rate in 30:1 BOE of ˜1250 Å/min. Films cured at 900 °C have a refractive index of 1.42–1.43, a wet-etching rate of ˜430 A/min, and are more dense by a factor of ˜1.25. Dry-etching with CHF3/O2 occurs at rates comparable to those of CVD oxides. Multiple applications lead to crack-free films as thick as 0.6–0.8 μ m. Deposition over aluminum-patterned topography results in a smoothing of the surface and suppression of hillock growth in the aluminum even after a 450 °C cure. SOX adheres to silicon, aluminum, and silicon dioxide. A boron-doped SOX is readily prepared.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 563
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Some alternative methods of preparing silicate sol/gel solutions: a) Pettit, R.B. and Brinker, C.J., Solar Energy Mater., 14, 269 (1986); b) B.E. Yoldas, J. Polym. Sci., Polym. Chem., 24, 3475 (1986).CrossRefGoogle Scholar
[2] Wong, J., J. Electronic Mater. 5, 113 (1976).CrossRefGoogle Scholar
[3] a) Rabinovich, E.M. and Wood, D.L., in “Better Ceramics Through Chemistry II,” edited by Brinker, C.J., Clark, D.E., and Ulrich, D.R. (Mater. Res. Soc. Proc., 60, Pittsburgh, PA 1986) p. 251.b) D.L. Wood and E.M. Rabinovich, J. Non-Cryst. Solids, 82, 171 (1986).Google Scholar
[4] Ryan, V. and Smolinsky, G., in “Chemical Perspectives of Microelectronic Materials,” edited by Gross, M.E., Yates, J.T. Jr, and Jasinski, J. (Mater. Res. Soc. Proc., 131, Pittsburgh, PA 1989) this issue.Google Scholar