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A Spin-on Dielectric Material for High Aspect Ratio Gap Fill

Published online by Cambridge University Press:  01 February 2011

Wei Chen ,
Sheng Wang ,
Ather Ashraf ,
Edward Somerville ,
Gerard Nowaczyk ,
BK Hwang ,
JK Lee  and
Eric S. Moyer
Wei Chen
Affiliation:
Dow Corning Corporation, Midland, MI 48686 Carlo Waldfried, Orlando Escocia, and Qingyuan Han Axcelis Technologies, Inc, Rockville, MD 20855
Sheng Wang
Affiliation:
Dow Corning Corporation, Midland, MI 48686 Carlo Waldfried, Orlando Escocia, and Qingyuan Han Axcelis Technologies, Inc, Rockville, MD 20855
Ather Ashraf
Affiliation:
Dow Corning Corporation, Midland, MI 48686 Carlo Waldfried, Orlando Escocia, and Qingyuan Han Axcelis Technologies, Inc, Rockville, MD 20855
Edward Somerville
Affiliation:
Dow Corning Corporation, Midland, MI 48686 Carlo Waldfried, Orlando Escocia, and Qingyuan Han Axcelis Technologies, Inc, Rockville, MD 20855
Gerard Nowaczyk
Affiliation:
Dow Corning Corporation, Midland, MI 48686 Carlo Waldfried, Orlando Escocia, and Qingyuan Han Axcelis Technologies, Inc, Rockville, MD 20855
BK Hwang
Affiliation:
Dow Corning Corporation, Midland, MI 48686 Carlo Waldfried, Orlando Escocia, and Qingyuan Han Axcelis Technologies, Inc, Rockville, MD 20855
JK Lee
Affiliation:
Dow Corning Corporation, Midland, MI 48686 Carlo Waldfried, Orlando Escocia, and Qingyuan Han Axcelis Technologies, Inc, Rockville, MD 20855
Eric S. Moyer
Affiliation:
Dow Corning Corporation, Midland, MI 48686 Carlo Waldfried, Orlando Escocia, and Qingyuan Han Axcelis Technologies, Inc, Rockville, MD 20855
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Abstract

This communication describes the results of a potential spin-on glass (SOG) solution for narrow and high aspect ratio trench fill in both shallow trench isolation (STI) and premetal dielectric (PMD) applications. We have focused our development work on a hydrogen silsesquioxane (HSQ, (HSiO3/2)n) material, which offers the advantage of a carbon free gap fill solution. The main challenge for carbon-free SOG materials is to achieve material densification in the nano-scale gaps during thermal processing that of the gap filled material during the wet cleaning steps. This paper reports some approaches and findings on material densification in the nano-scale gaps and the results of subsequent wet etch tests.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 863: Symposium B – Materials, Technology and Reliability of Advanced Interconnects , 2005 , B8.5
Copyright
Copyright © Materials Research Society 2005

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References

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