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A Spin-on Dielectric Material for High Aspect Ratio Gap Fill

Published online by Cambridge University Press:  01 February 2011

Wei Chen ,
Sheng Wang ,
Ather Ashraf ,
Edward Somerville ,
Gerard Nowaczyk ,
BK Hwang ,
JK Lee  and
Eric S. Moyer
Wei Chen
Affiliation:
Dow Corning Corporation, Midland, MI 48686 Carlo Waldfried, Orlando Escocia, and Qingyuan Han Axcelis Technologies, Inc, Rockville, MD 20855
Sheng Wang
Affiliation:
Dow Corning Corporation, Midland, MI 48686 Carlo Waldfried, Orlando Escocia, and Qingyuan Han Axcelis Technologies, Inc, Rockville, MD 20855
Ather Ashraf
Affiliation:
Dow Corning Corporation, Midland, MI 48686 Carlo Waldfried, Orlando Escocia, and Qingyuan Han Axcelis Technologies, Inc, Rockville, MD 20855
Edward Somerville
Affiliation:
Dow Corning Corporation, Midland, MI 48686 Carlo Waldfried, Orlando Escocia, and Qingyuan Han Axcelis Technologies, Inc, Rockville, MD 20855
Gerard Nowaczyk
Affiliation:
Dow Corning Corporation, Midland, MI 48686 Carlo Waldfried, Orlando Escocia, and Qingyuan Han Axcelis Technologies, Inc, Rockville, MD 20855
BK Hwang
Affiliation:
Dow Corning Corporation, Midland, MI 48686 Carlo Waldfried, Orlando Escocia, and Qingyuan Han Axcelis Technologies, Inc, Rockville, MD 20855
JK Lee
Affiliation:
Dow Corning Corporation, Midland, MI 48686 Carlo Waldfried, Orlando Escocia, and Qingyuan Han Axcelis Technologies, Inc, Rockville, MD 20855
Eric S. Moyer
Affiliation:
Dow Corning Corporation, Midland, MI 48686 Carlo Waldfried, Orlando Escocia, and Qingyuan Han Axcelis Technologies, Inc, Rockville, MD 20855
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Abstract

This communication describes the results of a potential spin-on glass (SOG) solution for narrow and high aspect ratio trench fill in both shallow trench isolation (STI) and premetal dielectric (PMD) applications. We have focused our development work on a hydrogen silsesquioxane (HSQ, (HSiO3/2)n) material, which offers the advantage of a carbon free gap fill solution. The main challenge for carbon-free SOG materials is to achieve material densification in the nano-scale gaps during thermal processing that of the gap filled material during the wet cleaning steps. This paper reports some approaches and findings on material densification in the nano-scale gaps and the results of subsequent wet etch tests.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 863: Symposium B – Materials, Technology and Reliability of Advanced Interconnects , 2005 , B8.5
Copyright
Copyright © Materials Research Society 2005

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References

1. Bayman, A.et al., US Patent 6,596,654 B1,2003 Google Scholar
2. Shimizu, Y., Aoki, T., and Funayama, O., US Patent, 6,310,168 B1, 2001 Google Scholar
3. Park, J.H.et al., J. Electrochem. Soc., 2003. 150: p. G359.Google Scholar
4. Li, Z.et al. Proceedings of Material Research Society Meetings, 2002, Vol 716, 325.Google Scholar