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Spin-Dependent Recombination Effects in a-SI:H Pin Solar Cell Devices: A New Characterization Technique

Published online by Cambridge University Press:  15 February 2011

Klaus Lips
Klaus Lips*
Affiliation:
Fachbereich Pysik und Wissenschaftliches Zentrum für Materialwissenschaften, Phillips Universität Marburg, Renthof 5, D-35032 Marburg, Germany
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Abstract

Electrically detected magnetic resonance (EDMR) - also often referred to as spin-dependent photoconductivity - is a particularly attractive technique for the investigation of the electronic properties of semiconductor devices. This method detects the paramagnetic states involved in transport and recombination by recording changes of the sample current induced by a resonant enhancement of the recombination rates. This is in contrast to ESR which monitors the resonant enhancement of microwave absorption. Therefore, EDMR is more sensitive by many orders of magnitude than conventional ESR and can be used to investigate a-Si:H solar cell devices under standard operating conditions.

In this report we review the EDMR technique and discuss, in detail, the spin-dependent processes controlling dark and photocurrent of standard a-Si:H pin solar cells. In particular, we show that EDMR is sensitive to changes in the internal field of the i layer. We compare the experimental results to numerical calculations of the potential profiles and of EDMR-related quantities. We arrive at the conclusion that degradation by both high forward current and illumination increases the defect density mainly in the i layer, rather than at the pi interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 455
Copyright
Copyright © Materials Research Society 1995

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References

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