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Spectroscopy Studies of InP Nanocrystals Synthesized Through a Fast Reaction

Published online by Cambridge University Press:  01 February 2011

Madalina Furis ,
David J. MacRae ,
D. W. Lucey ,
Yudhisthira Sahoo ,
Alexander N. Cartwright  and
Paras N. Prasad
Madalina Furis
Affiliation:
Department of Electrical Engineering, University at Buffalo, Buffalo, NY, 14260, USA
David J. MacRae
Affiliation:
Institute for Lasers, Photonics and Biophotonics, University at Buffalo, Buffalo, NY, 14260, USA
D. W. Lucey
Affiliation:
Institute for Lasers, Photonics and Biophotonics, University at Buffalo, Buffalo, NY, 14260, USA
Yudhisthira Sahoo
Affiliation:
Institute for Lasers, Photonics and Biophotonics, University at Buffalo, Buffalo, NY, 14260, USA
Alexander N. Cartwright
Affiliation:
Department of Electrical Engineering, University at Buffalo, Buffalo, NY, 14260, USA
Paras N. Prasad
Affiliation:
Department of Electrical Engineering, University at Buffalo, Buffalo, NY, 14260, USA
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Abstract

We present spectroscopic characterization of InP nanocrystals grown through a fast reaction in a non-coordinating solvent. The photoluminescence (PL) spectra collected from these nanocrystals exhibit a sharp feature associated with the band-edge emission and a broad infrared feature associated with deep level surface trap emission. The emission efficiencies of the as-grown nanocrystals vary between 0.3% and 1% from sample to sample. After undergoing an HF etching process, the emission efficiency increases to 18% and the emission associated with surface states is eliminated from the PL spectrum. Time-resolved photoluminescence (TRPL) experiments conducted at room temperature on the as-grown and HF-etched nanocrystals show that before etching the PL intensity decay is multi-exponential, with a fast (3ns) component independent of wavelength, associated with the non-radiative recombination processes. The etching process effectively eliminates the non-radiative component and the post-etching PL decay can be fitted with a single exponential decay characterized by long (45ns) lifetimes. We tentatively associate these long lifetimes with the recombination of carriers from spin-forbidden states. This assignment is supported by the observation of a significant redshift of the feature associated with band-edge recombination in the PL spectrum with respect to the lowest energy feature in the photoluminescence excitation (PLE) spectrum.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 789 , 2003 , N3.35
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Alivisatos, A. P., Science 271, 933 (1996).Google Scholar
2. Kuno, M., Lee, J. K., Dabbousi, B. O., Mikulec, F. V., and Bawendi, M. G., Journal of Chemical Physics 106, 9869 (1997).Google Scholar
3. Micic, O. I., Sprague, J., Lu, Z. H., and Nozik, A. J., Applied Physics Letters 68, 3150 (1996).Google Scholar
4. Micic, O. I. and Nozik, A. J., Journal of Luminescence 70, 95 (1996).Google Scholar
5. Guzelian, A. A., Katari, J. E. B., Kadavanich, A. V., Banin, U., Hamad, K., Juban, E., Alivisatos, A. P., Wolters, R. H., Arnold, C. C., and Heath, J. R., Journal of Physical Chemistry 100, 7212 (1996).Google Scholar
6. Alivisatos, A. P. and Olshavsky, M. A., Patent No. 5,505,928 (9 April 1996).Google Scholar
7. Alivisatos, A. P., Peng, X. G., and Liberato, M., Patent No. 6,306,736 (23 October 2001).Google Scholar
8. Banin, U. and Cao, Y. -W., USA Patent No. 20030010987 (16 January 2003).Google Scholar
9. Micic, O. I., Curtis, C. J., Jones, K. M., Sprague, J. R., and Nozik, A. J., Journal of Physical Chemistry 98, 4966 (1994).Google Scholar
10. Ellingson, R. J., Blackburn, J. L., Yu, P. R., Rumbles, G., Micic, O. I., and Nozik, A. J., Journal of Physical Chemistry B 106, 7758 (2002).Google Scholar
11. Furis, M., Sahoo, Y., MacRae, D. J., Manciu, F. S., Cartwright, A. N., and Prasad, P. N., Journal of Physical Chemistry B 107, 11622 (2003).Google Scholar
12. Battaglia, D. and Peng, X. G., Nano Letters 2, 1027 (2002).Google Scholar
13. Micic, O. I., Cheong, H. M., Fu, H., Zunger, A., Sprague, J. R., Mascarenhas, A., and Nozik, A. J., Journal of Physical Chemistry B 101, 4904 (1997).Google Scholar
14. Fu, H. X. and Zunger, A., Physical Review B 56, 1496 (1997).Google Scholar
15. Nirmal, M., Norris, D. J., Kuno, M., Bawendi, M. G., Efros, A. L., and Rosen, M., Physical Review Letters 75, 3728 (1995).Google Scholar