Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-25T17:52:57.507Z Has data issue: false hasContentIssue false
  • English
  • Français

Spectroscopic Study of Rare Earth Doped Nano-Crystalline Silicon in Sio2 Films

Published online by Cambridge University Press:  11 February 2011

C. Rozo ,
L. F. Fonseca ,
O. Resto  and
S. Z. Weisz
C. Rozo
Affiliation:
Physics Department, University of Puerto Rico at Rio Piedras, San Juan, PR, USA
L. F. Fonseca
Affiliation:
Physics Department, University of Puerto Rico at Rio Piedras, San Juan, PR, USA
O. Resto
Affiliation:
Physics Department, University of Puerto Rico at Rio Piedras, San Juan, PR, USA
S. Z. Weisz
Affiliation:
Physics Department, University of Puerto Rico at Rio Piedras, San Juan, PR, USA
Get access

Abstract

Si-rich SiO2, Nd-doped Si-rich SiO2 and Nd-doped SiO2 thin films were prepared. Photoluminescence (PL) spectra for visible and infrared were obtained for each as-deposited film. The samples were annealed by steps to different temperatures within the range 600°C-1100°C for 30 minutes at each annealing temperature. PL spectra were obtained at each step and their characteristics were studied. The best annealing temperature for the PL of the rare earth (RE) ions was obtained. The PL spectra of the films were compared with one another. Energy transfer from the silicon nanocrystals (Si nc) to the RE ions is verified using excitation wavelength and excitation power spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F3.46
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Snitzer, E., Phys. Rev. Lett. 7, 444 (1961)Google Scholar
2. MRS Bull. 24 9, (1999)Google Scholar
3. Kik, P. G., Polman, A., MRS Bull. 23 4, 48 (1998)Google Scholar
4. Ehrmann, P. R., Campbell, J. H., J. Am. Ceram. Soc. 85, 1061 (2002)Google Scholar
5. Bjarklev, A. Optical Fiber Amplifiers: Design and System Applications, (Artech House, Norwood, MA, USA, 1993) 416ppGoogle Scholar
6. Fujii, M., Yoshida, M., Kanzawa, Y., Hayashi, S., Yamamoto, K., Appl. Phys. Lett. 71, 1198 (1997)Google Scholar
7. Franzó, G., Pacifici, D., Vinciguerra, V., Priolo, F., Iacona, F., Appl. Phys. Lett. 76, 2167 (2000)Google Scholar
8. Priolo, F., Franzó, G., Iacona, F., Pacifici, D., Vinciguerra, V., Mat. Sc. & Engin. B 81, 9 (2001)Google Scholar
9. Fujii, M., Hayashi, S., Yamamoto, K., Appl. Phys. Lett. 73, 3108 (1998)Google Scholar
10. Nery, G. A., Mahfoud, A., Fonseca, L. F., Liu, H., Resto, O., Weisz, S. Z., Mat. Res. Soc. Symp. Proc. Vol. 581, 647 (2000)Google Scholar
11. Franzò, G., Vinciguerra, V., Priolo, F., Appl. Phys. A 69, 3 (1999)Google Scholar
12. Rochat, E., these de doctorat d'état ès sciences, Faculté des Sciences, Université de Neuchâtel, Neuchâtel, Switzerland (2000)Google Scholar
13. Fonseca, L. F., Resto, O., Katiyar, R., Gupta, S., Weisz, S. Z., Goldstein, Y., Many, A., Shapir, J., Proceedings of the 24th ICPS (CD version), Gershoni, D. (ed.), World Scientific, (1999)Google Scholar
14. Fonseca, L. F., Resto, O., Soni, R. K., Buzaianu, M., Weisz, S. Z., Gómez, M., Jia, W., Mat. Sc. & Engin. B 72, 109 (2000)Google Scholar
15. Hanak, J. J., Lehman, H. W., Wehner, R. K., J. Appl. Phys. 43 1666 (1972)Google Scholar
16. Gaponenko, S. V. Optical Properties of Semiconductor Nanocrystals, (Cambridge University Press, Cambridge, UK, 1998) 257ppGoogle Scholar
17. John, J. St., Coffer, J. L., Chen, Y., Pinizzotto, R. F., Appl. Phys. Lett. 77, 1635 (2000)Google Scholar
18. Langlet, M., Coutier, C., Meffre, W., Audier, M., Fick, J., Rimet, R., Jacquier, B., J. Lumin. 96, 295 (2000)Google Scholar
19. Arai, K., Namikawa, h., Kumata, K., Honda, T., Ishii, Y., Handa, T., J. Appl. Phys. 59, 3430 (1986)Google Scholar