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Spectroscopic Identification of the Acceptor-Hydrogen Complex in Mg-Doped GaN Grown by MOCVD

Published online by Cambridge University Press:  10 February 2011

W. Götz ,
M. D. McCluskey ,
N. M. Johnson ,
D. P. Bour  and
E. E. Haller
W. Götz
Affiliation:
Hewlett-Packard Company, San Jose, California 95131, USA
M. D. McCluskey
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304, USA
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304, USA
D. P. Bour
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304, USA
E. E. Haller
Affiliation:
Lawrence Berkeley Laboratory and the University of California, Berkeley, California 94720, USA
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Abstract

Mg-doped GaN films grown by metalorganic chemical vapor deposition were characterized by variable-temperature Hall-effect measurements and Fourier-transform infrared absorption spectroscopy. As-grown, thermally activated, and deuterated Mg-doped GaN samples were investigated. The existence of Mg-H complexes in GaN is demonstrated with the observation of a local vibrational mode (LVM) at 3125 cm-1 (8 K). At 300 K this absorption line shifts to 3122 cm-1. The intensity of the LVM line is strongest in absorption spectra of as-grown GaN. Mg which is semi-insulating. Upon thermal activation, the intensity of the LVM line significantly decreases and an acceptor concentration of 2×1019cm-3 is derived from the Hall-effect data. After deuteration at 600°C the resistivity of the Mg-doped GaN increased by four orders of magnitude. A LVM line at 2321 cm-1 (8 K) appears in the absorption spectra which is consistent with the isotopie shift of the vibrational frequency when D is substituted for H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 117
Copyright
Copyright © Materials Research Society 1997

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References

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