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Spectroscopic Ellipsometry Characterisation of Thin Film Polysilicon

Published online by Cambridge University Press:  22 February 2011

S. Lynch ,
L. Spinelli ,
M. Sherlock ,
J. Barrett  and
G.M. Crean
S. Lynch
Affiliation:
National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland
L. Spinelli
Affiliation:
National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland
M. Sherlock
Affiliation:
National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland
J. Barrett
Affiliation:
National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland
G.M. Crean
Affiliation:
National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland
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Abstract

Phase modulated Spectroscopic Ellipsometry (SE), in the spectral range from 1.5eV to 4.6eV, was employed to characterise thin film polysilicon (poly-Si) deposited by Low Pressure Chemical Vapour Deposition (LPCVD) on SiO2/Si(100) substrates as a function of process parameters. The LPCVD deposition temperature was varied from 550°C to 620°C for silane pressures ranging from 100mTorr to 230mTorr. A variation in poly-Si microstructure was observed as a function of film depth. The influence of deposition conditions on poly-Si surface morphology was quantified using both atomic force microscopy (AFM) and SE. An increase in the measured Raman TO phonon amplitude was observed for the 620°C sample set as a function of increasing LPCVD process pressure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 39
Copyright
Copyright © Materials Research Society 1994

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