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Spectroscopic Characterization and Investigation of Strained InGaAs/GaAs Heterostructures

Published online by Cambridge University Press:  25 February 2011

S.C. Shen ,
X.M. Fang  and
W. Shan
S.C. Shen
Affiliation:
Institut für Halbleiterphysik und Optik, TU Braunschweig, D-3300 Braunschweig, FRG National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai 200083, China
X.M. Fang
Affiliation:
National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai 200083, China
W. Shan
Affiliation:
National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai 200083, China
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Abstract

We report the comprehensive investigation and characterization of the band structure and interband transitions for the strained InxGa1−xAs/GaAs heterostructures and QW by use of a combination of- different spectroscopic techniques, that is photocurrent, photoreflectance and photoabsorption spectroscopies under low temperatures and high pressures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 229
Copyright
Copyright © Materials Research Society 1991

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References

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