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Spectroscopic analysis of external stresses in semiconductor quantum-well materials

Published online by Cambridge University Press:  26 February 2011

Jens W. Tomm ,
Mark L. Biermann ,
B. S. Passmore ,
M. O. Manasreh ,
A. Gerhardt  and
Tran Q. Tien
Jens W. Tomm
Affiliation:
Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A, 12489 Berlin, Germany
Mark L. Biermann
Affiliation:
Department of Physics and Astronomy, Moore 351, Eastern Kentucky University, Richmond, KY 40475, U.S.A.
B. S. Passmore
Affiliation:
Department of Electrical Engineering, Bell Engineering Center, University of Arkansas, Fayetteville, AR 72701, U.S.A.
M. O. Manasreh
Affiliation:
Department of Electrical Engineering, Bell Engineering Center, University of Arkansas, Fayetteville, AR 72701, U.S.A.
A. Gerhardt
Affiliation:
Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A, 12489 Berlin, Germany
Tran Q. Tien
Affiliation:
Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A, 12489 Berlin, Germany
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Abstract

We present an approach for spectroscopic strain analysis in semiconductor quantum-well devices. This approach is applicable to all types of semiconductor materials, and to spectroscopic techniques which employ the electronic band-structure of the material, such as photoluminescence, photoreflection, photocurrent, and transmittance. The approach is based on two components, namely the theoretical calculation of the strain-sensitivity of the spectral positions of the relevant quantum-confined optical transitions within a particular quantum-well, and the spatially resolved measurement of a substantial part of the optical transition sequence within the quantum-well. The primary experimental technique applied in our approach is photocurrent spectroscopy. InAlGaAs/GaAlAs/GaAs, high-power lasers serve as the model species.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B4.4
Copyright
Copyright © Materials Research Society 2005

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References

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