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Spectrally Resolved Fill Factor Measurements on a-Si:H Based Solar Cell Structures

Published online by Cambridge University Press:  10 February 2011

Michael Wagner ,
Dimitrios Peros ,
Stephan Guse  and
Markus Böhm
Michael Wagner
Affiliation:
Universität-GH Siegen, Institut für Halbleiterelektronik (IHE), D-57068 Siegen, Germany
Dimitrios Peros
Affiliation:
Universität-GH Siegen, Institut für Halbleiterelektronik (IHE), D-57068 Siegen, Germany
Stephan Guse
Affiliation:
Universität-GH Siegen, Institut für Halbleiterelektronik (IHE), D-57068 Siegen, Germany
Markus Böhm
Affiliation:
Universität-GH Siegen, Institut für Halbleiterelektronik (IHE), D-57068 Siegen, Germany
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Abstract

This work presents essential differences in the fill factors (FF) of pin and nip solar cell structures based on hydrogenated amorphous silicon (a-Si:H). The nomenclature “pin’ (‘nip’ respectively) determines the deposition sequence of the single layers. Fill factor measurements are carried out with illumination through p- and n-layers at different wavelengths. The use of laser light provides a wide range of illumination levels and photo current densities of up to 14mA/cm2. The spectrally resolved FF measurements indicate an incorporation of dopants in the i-layer depending on the layer deposited first. Nip and pin structures generally show opposite FF dispersion when illuminated through the same layer. However, due to the slight n-conductivity of intrinsic a-Si:H material, a weak boron incorporation leads to a net charge compensation in the ilayer. In contrast to other investigations we do not find a significant deviation in the open circuit voltages of the pin and nip devices as long as the deposition parameters of the single layers are identical.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 71
Copyright
Copyright © Materials Research Society 1996

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