Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T16:26:25.026Z Has data issue: false hasContentIssue false
  • English
  • Français

Spectral Reflectance as an in Situ Monitor for Mocvd

Published online by Cambridge University Press:  22 February 2011

W G. Breiland  and
K. P. Killeen
W G. Breiland
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, 87185-0601
K. P. Killeen
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, 87185-0601
Get access

Abstract

Near normal-incidence spectral reflectance has been used to monitor the growth of AlAs, GaAs, and AlGaAs thin films by MOCVD in real time. The method has been used in a research rotating disk CVD reactor and in a modified commercial horizontal channel reactor. Reflectance is simple, robust, and is insensitive to perturbations such as mechanical strains, wafer rotation, and imperfect windows commonly encountered in an actual MOCVD system. Data may be collected over a wide spectral range, 390 to 950 nm, in less than one second using a multichannel detector and broad-band light source. This wide bandwidth provides detailed compositional discrimination and greater thickness sensitivity than single-wavelength measurements. The technique may be used to extract wavelength-dependent optical constant data under growth temperature conditions. Examples from the growth of multi-layered structures used in the fabrication of Vertical Cavity Surface Emitting Lasers is presented. The method shows promise as a valuable tool in process modeling, optimization, and control.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 99
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Macleod, H. A., Thin-Film Optical Filters, 2nd ed. (Mcgraw-Hill, New York, 1989).Google Scholar
2. Thorpe, A. J. Spring and Majeed, A., J. Vac. Sci. Technol. B 8, 266 (1990).Google Scholar
3. Farrell, T, Armstrong, J. V., and Kightley, P., Appl. Phys. Lett. 59, 1203 (1991).CrossRefGoogle Scholar
4. Sankur, H., Southwell, W., and Hall, R., J. Electron. Mat. 20, 1099 (1991).CrossRefGoogle Scholar
5. Frateschi, N. C., Hummel, S. G. and Dapkus, P. D., Electron. Lett. 27, 155 (1991).CrossRefGoogle Scholar
6. Makimoto, T., Yamauchi, Y., Kobayashi, N., and Horikoshi, Y., Japan. J. Appl. Phys. 29, L207 (1990).CrossRefGoogle Scholar
7. Strong, J., Procedures in Experimental Physics, (Prentice-Hall, New York, 1938), p. 376.Google Scholar
8. Killeen, K. P. and Breiland, W. G., J. Electron. Mat., special issue, Sixth Biennial Workshop on Organometallic Vapor Phase Epitaxy, 1993 (to be published).Google Scholar
9. Yao, H., Snyder, P. G., and Woollam, J. A., J. Appl. Phys. 70, 3261 (1991).CrossRefGoogle Scholar