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A Spatially Resolved Study of Chemical Vapor Deposition of a-Si:H with Pure Thermal Excitation of Disilane

Published online by Cambridge University Press:  21 February 2011

G. Amato ,
R. Spagnolo ,
F. Fizzotti ,
C. Manfredotti ,
P. Menna  and
G. Nobile
G. Amato
Affiliation:
Istituto Elettrotecnico Nazionale Galileo Ferraris, Strada delle Cacce 91, 10135 Turin, Italy
R. Spagnolo
Affiliation:
Istituto Elettrotecnico Nazionale Galileo Ferraris, Strada delle Cacce 91, 10135 Turin, Italy
F. Fizzotti
Affiliation:
Dipartimento di Fisica Sperimentale Universita di Torino, Via P. Giuria 1, 10125 Turin, Italy
C. Manfredotti
Affiliation:
Dipartimento di Fisica Sperimentale Universita di Torino, Via P. Giuria 1, 10125 Turin, Italy
P. Menna
Affiliation:
ENEA, Centro Ricerche Fotovoltaiche, Localita Granatello, P.O. Box 32, 80055 Portici (Naples), Italy
G. Nobile
Affiliation:
ENEA, Centro Ricerche Fotovoltaiche, Localita Granatello, P.O. Box 32, 80055 Portici (Naples), Italy
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Abstract

Optical, electronic and structural properties of a-Si:H samples grown by Low Pressure Chemical Vapor Deposition have been investigated by means of IR spectroscopy, Raman scattering and Photothermal Deflection Spectros-copy.

Samples grown at different positions along the tube show very different properties that can be related to the amount of H and to the nature of the Si-H bonds.

The most important parameters governing the thermally excited growth of a-Si:H are presented and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 685
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Schmitt, J.P.M., Proc. II Winter European Course on Amorphous Silicon, Spear, W.E. ed., TASK (Ispra), 1989, and references therein.Google Scholar
2. Wagner, H., Beyer, W., Solid State Comm. 48, 585 (1983).CrossRefGoogle Scholar
3. Jousse, D., Bustarret, E., Boulitrop, F., Solid State Comm. 55, 485 (1985).CrossRefGoogle Scholar
4. Mahan, A.H., Raboisson, P., Tsu, R., Appl. Phys. Lett. 50, 335 (1987).CrossRefGoogle Scholar
5. Mahan, A.H., Raboisson, P., Williamson, O.L., Tsu, R., Sol. Cells 21, 117 (1987).CrossRefGoogle Scholar
6. Mahan, A.H., Menna, P., Tsu, R., Appl. Phys. Lett. 51, 1167 (1987).CrossRefGoogle Scholar
7. Deb, S.K., Thin Solid Films 163, 75 (1988).CrossRefGoogle Scholar
8. Amato, G., Delia Mea, G., Fizzotti, F., Manfredotti, C., Marchisio, R., Paccagnella, A., Phys. Rev. B 43, 6627 (1991).CrossRefGoogle Scholar
9. Amato, G., Boarino, L., Fizzotti, F., Manfredotti, C., MRS Symposia Proceedings 192 (1990).Google Scholar
10. Amato, G., Benedetto, G., Boarino, L., Spagnolo, R., Appl. Phys. A 50, 503 (1990).CrossRefGoogle Scholar
11. Pollack, F., Tsu, R., SPIE Proceedings 452, 26 (1983).CrossRefGoogle Scholar