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Spatially Resolved Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC Wafers

Published online by Cambridge University Press:  11 February 2011

Yu. M. Suleimanov ,
S. Lulu ,
I. Tarasov ,
S. Ostapenko ,
S. E. Saddow ,
T. V. Torchinska ,
V. D. Heydemann ,
M. D. Roth ,
O. Kordina  and
M. F. MacMillan
Yu. M. Suleimanov
Affiliation:
University of South, Florida, Tampa, Florida, 33620, U.S.A.
S. Lulu
Affiliation:
University of South, Florida, Tampa, Florida, 33620, U.S.A.
I. Tarasov
Affiliation:
University of South, Florida, Tampa, Florida, 33620, U.S.A.
S. Ostapenko
Affiliation:
University of South, Florida, Tampa, Florida, 33620, U.S.A.
S. E. Saddow
Affiliation:
University of South, Florida, Tampa, Florida, 33620, U.S.A.
T. V. Torchinska
Affiliation:
ISFM – National Polytechnic Institute, Mexico DF, Mexico
V. D. Heydemann
Affiliation:
Sterling Semiconductor, Tampa, Florida 33619, U.S.A.
M. D. Roth
Affiliation:
Sterling Semiconductor, Tampa, Florida 33619, U.S.A.
O. Kordina
Affiliation:
Sterling Semiconductor, Tampa, Florida 33619, U.S.A.
M. F. MacMillan
Affiliation:
Sterling Semiconductor, Tampa, Florida 33619, U.S.A.
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Abstract

We report on non-contact and non-destructive spatially resolved characterization of traps and luminescence centers in vanadium-free semi-insulating 6H-SiC. Two optical techniques were employed: photoluminescence (PL) mapping and thermally stimulated luminescence (TSL) imaging on SiC wafers. PL and TSL topography reveal inhomogeneity at the periphery regions of the wafers. Low-temperature PL spectra show broad bands with the maxima at 1.75eV and 1.2eV, including a sharp zero-phonon line at 1.344eV. The TSL glow curves at T>80K show different peaks in the visible and infrared bands. The luminescence spectrum of the 105K TSL peak replicates 1.75eV band, while the 120K peak corresponds to the 1.2eV band. Additionally, the high temperature TSL peak at 210K shows an excellent match with 1.344eV zero phonon line. The trap energies of different peaks are calculated. We discuss a model of complex defects composed of closely spaced electron (hole) trap and UD3 defect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K2.9
Copyright
Copyright © Materials Research Society 2003

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References

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