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Spatially resolved optical emission of cubic GaN/AlN multi-quantum well structures

Published online by Cambridge University Press:  19 December 2014

D.J. As ,
R. Kemper ,
C. Mietze ,
T. Wecker ,
J.K.N. Lindner ,
P. Veit ,
A. Dempewolf ,
F. Bertram  and
J. Christen
D.J. As
Affiliation:
Department Physik, Universität Paderborn, Warburger Strasse 100, 33095 Paderborn, Germany
R. Kemper
Affiliation:
Department Physik, Universität Paderborn, Warburger Strasse 100, 33095 Paderborn, Germany
C. Mietze
Affiliation:
Department Physik, Universität Paderborn, Warburger Strasse 100, 33095 Paderborn, Germany
T. Wecker
Affiliation:
Department Physik, Universität Paderborn, Warburger Strasse 100, 33095 Paderborn, Germany
J.K.N. Lindner
Affiliation:
Department Physik, Universität Paderborn, Warburger Strasse 100, 33095 Paderborn, Germany
P. Veit
Affiliation:
Institut für Experimentelle Physik, Universität Magdeburg, P.O. Box 4120, D-39016 Magdeburg, Germany
A. Dempewolf
Affiliation:
Institut für Experimentelle Physik, Universität Magdeburg, P.O. Box 4120, D-39016 Magdeburg, Germany
F. Bertram
Affiliation:
Institut für Experimentelle Physik, Universität Magdeburg, P.O. Box 4120, D-39016 Magdeburg, Germany
J. Christen
Affiliation:
Institut für Experimentelle Physik, Universität Magdeburg, P.O. Box 4120, D-39016 Magdeburg, Germany
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Abstract

In this contribution we report on the optical properties of cubic AlN/GaN asymmetric multi quantum wells (MQW) structures on 3C-SiC/Si (001) substrates grown by radio-frequency plasma-assisted molecular beam epitaxy (MBE). Scanning transmission electron microscopy (STEM) and spatially resolved cathodoluminescence (CL) at room temperature and at low temperature are used to characterize the optical properties of the cubic AlN/GaN MQW structures. An increasing CL emission intensity with increasing film thickness due to the improved crystal quality was observed. This correlation can be directly connected to the reduction of the linewidth of x-ray rocking curves with increasing film thickness of the c-GaN films. Defects like stacking faults (SFs) on the {111} planes, which also can be considered as hexagonal inclusions in the cubic crystal matrix, lead to a decrease of the CL emission intensity. With low temperature CL line scans also monolayer fluctuations of the QWs have been detected and the observed transition energies agree well with solutions calculated using a one-dimensional (1D) Schrödinger-Poisson simulator.

Keywords

molecular beam epitaxy (MBE)nitrideluminescence
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1736: Wide-Bandgap Materials for Solid-State Lighting and Power Electronics , 2014 , mrsf14-1736-t03-03
Copyright
Copyright © Materials Research Society 2014 

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References

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