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Spatially and Temporally Resolved Reflectivity Profiles of Crystalline Silicon Irradiated by 48 Ps Pulses of One-Micron Laser Radiation

Published online by Cambridge University Press:  25 February 2011

Steven C. Moss ,
Ian W. Boyd ,
Thomas F. Boggess  and
Arthur L. Smirl
Steven C. Moss
Affiliation:
Center for Applied Quantum Electronics, Department of Physics, North Texas State University, Denton, Texas76203
Ian W. Boyd
Affiliation:
Center for Applied Quantum Electronics, Department of Physics, North Texas State University, Denton, Texas76203
Thomas F. Boggess
Affiliation:
Center for Applied Quantum Electronics, Department of Physics, North Texas State University, Denton, Texas76203
Arthur L. Smirl
Affiliation:
Center for Applied Quantum Electronics, Department of Physics, North Texas State University, Denton, Texas76203
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Abstract

Time-resolved reflectivity measurements have been performed on single-crystal silicon irradiated by intense 48 ps pulses of 1 micron radiation. The temporal evolution of the spatial profile of the laser-induced reflectivity changes has been monitored using spatial correlation and surface imaging techniques. These measurements resolve apparent discrepancies between previous spatially and temporally averaged measurements at this wavelength and similar measurements in the visible.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 107
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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