Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-19T07:37:47.133Z Has data issue: false hasContentIssue false

Spatial Light Modulator Using A CDS Thin Film Photocapacitor

Published online by Cambridge University Press:  21 February 2011

Joseph Reichman*
Affiliation:
Grumman Corporate Research Center, Mail Stop A02-26, BethpageN.Y. 11714
Get access

Abstract

A brief summary is given of the characterization of an optically addressed Spatial Light Modulator (SLM) that uses a thin film of CdS as the hhotosensor and a liquid crystal as the electro-optic material. The required ghdark impedance of the CdS thin film is achieved by a depletion region created by surface acceptor states. Analysis of the SLM complex impedance as a function of frequency and illumination indicates that the voltage switching is due to the reduction in impedance with illumination caused by the increased capacitance of the CdS thin film. The impedance measurements as well as photoluminescence data were consistent with an acceptor surface state model accounting for the depletion region of the CdS thin fim. Additionally the SLM is shown to exhibit photoelectrochemical cell characteristics such as dark rectification, and a photocurrent and photovoltage proportional to the illumination intensity. The SLM performance characteristics of good resolution and sensitivity is attributed to the surface state induced depletion region.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yu, F.T., Optical Information Processing. (John Wiley, New York, 1983).Google Scholar
2. Sawchuk, A.A. and Strand, T.C., Proc. IEEE 72, 758 (1984).Google Scholar
3. Samuelson, L., Weider, H., Guarnieri, C.R., Chevallier, J., and Onton, A., Appl. Phys. Lett. 22, 450 (1979).Google Scholar
4. Efron, U., Grinberg, J., Braatz, P.O., Little, M.J., Reif, P.G., and Schwartz, R.N., J. Appl. Phys. 57, 1356 (1985).Google Scholar
5. Fraas, L. M., Grinberg, J., Bleha, W.P., and Jacobson, A.J., J. Appl. Phys. 47, 576 (1976).Google Scholar
6. Silberstein, R.P., Reichman, J., and DeCarlo, J., Bull. Am. Phys. Soc. (March 1985)Google Scholar
7. Nicollian, E.H. and Brews, J.R., MOS (Metal Oxide Semiconductor) Physics and Technology(John Wiley, New York, 1982)Google Scholar
8. Macdonald, J. R., Impedance Spectroscopy (John Wiley, New York, 1987)Google Scholar
9. Mark, P., RCA Review, 26, 461 (1965)Google Scholar
10. Shapir, J. and Many, A., Surface Science 14, 169 (1968)Google Scholar
11. Kulp, B.A. and Kelley, R.H., J.Appl.Phys 31,1057 (1960)Google Scholar
12. Ferrer, I.J. and Salvador, P., J.Appl.Phys. 66, 2568 (1989)Google Scholar