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Spatial distribution of electron concentration and strain in bulk GaN single crystals - relation to growth mechanism

Published online by Cambridge University Press:  10 February 2011

Piotr Perlin ,
Tadeusz Suski ,
Alain Polian ,
Jean Claude Chervin ,
Elzbieta Litwin-Staszewska ,
Izabella Grzegory ,
Sylwester Porowski  and
J. W. Erickson
Piotr Perlin
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87131–6081
Tadeusz Suski
Affiliation:
High Pressure Research Center, Polish Academy of Sciences, Sokolowska 29, 01-142 Warszawa, Poland
Alain Polian
Affiliation:
Physique des Milieux Condensés, Université Pierre et Marie Curie, F-75251 Paris, France
Jean Claude Chervin
Affiliation:
Physique des Milieux Condensés, Université Pierre et Marie Curie, F-75251 Paris, France
Elzbieta Litwin-Staszewska
Affiliation:
High Pressure Research Center, Polish Academy of Sciences, Sokolowska 29, 01-142 Warszawa, Poland
Izabella Grzegory
Affiliation:
High Pressure Research Center, Polish Academy of Sciences, Sokolowska 29, 01-142 Warszawa, Poland
Sylwester Porowski
Affiliation:
High Pressure Research Center, Polish Academy of Sciences, Sokolowska 29, 01-142 Warszawa, Poland
J. W. Erickson
Affiliation:
Charles Evans and Assoc., Redwood City, CA USA
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Abstract

Micro-infrared reflectivity and micro-Raman scattering have been used to determine free electron density and residual strain distribution in bulk GaN crystals. As-grown samples exhibit significant variation of electron concentration and strain along their surfaces. Increase of electron concentration correlates with the growth direction. The observed inhomogeneities in the properties of bulk GaN crystals can be eliminated by mechanical polishing of the crystal and removing the surface layer or growth figures formed during the sample cooling, which follows its high-pressure, high-temperature growth. Properties of that surface layer can differ from the bulk due to different growth mechanisms and impurity distribution. We suggest that oxygen is a likely candidate for the donor impurity supplying high amount of electrons to the conduction band of GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 519
Copyright
Copyright © Materials Research Society 1997

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References

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